Rimini emanuele (39 resultados)

Sottolineature a lapis VII + 204 p. in-8.

Condición: good. A copy that has been read, remains in good condition. All pages are intact, and the cover is intact. The spine and cover show signs of wear. Pages can include notes and highlighting and show signs of wear, and the copy can include "From the library of" labels or previous owner inscriptions. 100% GUARANTEE! Shipped with delivery confirmation, if you're not satisfied with purchase please return item! Ships via media mail.…

Condición: New. Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, July 1-13, 1991 Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century.

Buch. Condición: Neu. Crucial Issues in Semiconductor Materials and Processing Technologies | S. Coffa (u. a.) | Buch | NATO Science Series E: | xix | Englisch | 1992 | Springer Netherlands | EAN 9780792320036 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Condición: New. In English.

Condición: New. In English.

Hardcover. Condición: New. In shrink wrap. Looks like an interesting title.

Condición: New. Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, July 1-13, 1991 Editor(s): Coffa, S.; Priolo, Francesco; Rimini, Emanuele; Poate, J. M. (A&T Bell Laboratories, Murray Hill, New Jersey, USA). Series: NATO Science Series E. Num Pages: 557 pages, biography. BIC Classification: TJFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 235 x 155 x 31. Weight in Grams: 962. . 1992. Hardback. . . . .…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.…

Condición: New. In English.

Condición: New. In English.

Condición: New. Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, July 1-13, 1991 Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.…

Condición: New. A collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 393 pages, biography. BIC Classification: PHF; TD. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 23. Weight in Grams: 752. . 1994. Hardback. . . . .…

Condición: New. pp. 564.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.…

Condición: New. pp. 564.

Condición: New. pp. 412.

Condición: New. Proceedings of the NATO Advanced Study Institute on Semiconductor Materials and Processing Technologies, Erice, Italy, July 1-13, 1991 Editor(s): Coffa, S.; Priolo, Francesco; Rimini, Emanuele; Poate, J. M. (A&T Bell Laboratories, Murray Hill, New Jersey, USA). Series: NATO Science Series E. Num Pages: 557 pages, biography. BIC Classification: TJFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 235 x 155 x 31. Weight in Grams: 962. . 1992. Hardback. . . . . Books ship from the US and Ireland.…

Paperback. Condición: Brand New. 406 pages. 9.30x6.20x0.87 inches. In Stock.

Taschenbuch. Condición: Neu. Neuware - Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.…

Condición: New. A collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Series: The Springer International Series in Engineering and Computer Science. Num Pages: 393 pages, biography. BIC Classification: PHF; TD. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 23. Weight in Grams: 752. . 1994. Hardback. . . . . Books ship from the US and Ireland.…

(Milano) 1976, 8vo stralcio, pp. 179/196 con una figura e 7 grafici. (Pubblicazione n. 52). Timbro di Biblioteca estinta (?) - !! ATTENZIONE !!: Con il termine estratto (o stralcio) intendiamo riferirci ad un fascicolo contenente un articolo, completo in se, sia che esso sia stato stampato a parte utilizzando la stessa composizione sia che provenga direttamente da una rivista. Le pagine sono indicate come "da/a", ad esempio: 229/231 significa che il testo ?® composto da tre pagine. Quando la rivista di provenienza non viene indicata ? perch? ci ?® sconosciuta. - !! ATTENTION !!: : NOT A BOOK : ?Äúextract?Äù or ?Äúexcerpt?Äù means simply a few pages, original nonetheless, printed in a magazine. Pages are indicated as in "from?Äù ?Äúto", for example: 229/231 means the text comprises three pages (229, 230 and 231). If the magazine that contained the pages is not mentioned, it is because it is unknown to us.…

Condición: new. Questo è un articolo print on demand.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion. 562 pp. Englisch.…

Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor ma.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor ma.…

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject. 408 pp. Englisch.…

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject. 408 pp. Englisch.…

Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 562 pp. Englisch.…