Giber j (36 resultados)

Paperback. Condición: Good. some shelfwear/edgewear but still NICE! - may have remainder mark or previous owner's name Standard-sized.

Soft Cover. Condición: Good. Ex-library with the usual features. The interior is clean and tight. Cover shows slight wear and has library label on the front. 28 pages. Ex-Library.

Softcover. Condición: Gut. Ex-library in GOOD condition with library-signature and stamp(s). Some traces of use. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. R-17288 3540099883 Sprache: Englisch Gewicht in Gramm: 550.

PF. Condición: New.

Condición: New. In English.

Condición: New. pp. 292.

Paperback. Condición: Brand New. 1980 edition. 292 pages. 9.60x6.69x0.66 inches. In Stock.

Softcover. Condición: Gut. Ex-library in GOOD condition with library-signature and stamp(s). Some traces of use. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. C-00465 3540119868 Sprache: Englisch Gewicht in Gramm: 550.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits .…

Condición: As New. Unread book in perfect condition.

Softcover. Condición: Gut. 311 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 3540119868 Sprache: Englisch Gewicht in Gramm: 550.

Condición: New.

Condición: New.

Condición: New. In English.

Condición: As New. Unread book in perfect condition.

Condición: New. pp. 320.

Paperback. Condición: Brand New. spiral-bound edition. 317 pages. 9.61x6.70x0.73 inches. In Stock.

Paperback. Condición: Brand New. reprint edition. 460 pages. 9.25x6.10x1.10 inches. In Stock.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.…

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.…

gebundene Ausgabe. Condición: Sehr gut. 8°, XI, 444 Seiten mit 289 Figuren, farbig betitelter Original-Pappeinband - sehr guter Zustand - 1982. b31807 ISBN: 354011372x Sprache: Englisch Gewicht in Gramm: 850.

Paperback. Condición: Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. SHIPS FROM MULTIPLE LOCATIONS. book.

orig. wrappers. Condición: Minor wear. VG. 24x16cm, vi,307 pp., Series: Lecture Notes in Physics, 175. Full title reads: "Defect Complexes in Semiconductor Structures : Proceedings of the International School held in Mátrafüred, Hungary September 1317, 1982".

paperback. Condición: New. Paperback. Pub Date: 2013 Pages: 332 Language: Chinese in Publisher: Publishing House of Electronics Industry leadership development best practices manual: Case. tools and training methods (2nd edition) Based on Linkage company long-term leadership development research and consulting practice. on the field of leadership development proven guiding principles. tools. models and theories of the sort contains a real case of well-known enterprises from Dell. Bank of America. PricewaterhouseCoopers.…

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits . 292 pp. Englisch.…

Condición: New. Print on Demand pp. 292 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam.

Condición: New. PRINT ON DEMAND pp. 292.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectro.…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits .Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 292 pp. Englisch.…

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP. 320 pp. Englisch.…