9781119009740 - introduction to magnetic random-access memory de dieny, bernard (24 resultados)
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Librería: Scissortail, Oklahoma City, OK, Estados Unidos de AmericaScissortail
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EUR 78,58
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Condición: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition. Please note: -May include library or rental stickers, stamps, or markings. -Supplemental materials e.g., CDs, access codes, inserts… are not guaranteed. -Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading.
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Librería: Scissortail, Oklahoma City, OK, Estados Unidos de AmericaScissortail
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Aceptable
EUR 78,58
Gastos de envío gratisSe envía dentro de Estados Unidos de AmericaCantidad disponible: 1 disponibles
Condición: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition. Please note: -May include library or rental stickers, stamps, or markings. -Supplemental materials e.g., CDs, access codes, inserts… are not guaranteed. -Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading.
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Librería: Scissortail, Oklahoma City, OK, Estados Unidos de AmericaScissortail
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Aceptable
EUR 78,58
Gastos de envío gratisSe envía dentro de Estados Unidos de AmericaCantidad disponible: 1 disponibles
Condición: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition. Please note: -May include library or rental stickers, stamps, or markings. -Supplemental materials e.g., CDs, access codes, inserts… are not guaranteed. -Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading.
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Librería: Books From California, Simi Valley, CA, Estados Unidos de AmericaBooks From California
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EUR 81,73
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hardcover. Condición: Very Good.
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Librería: PBShop.store UK, Fairford, GLOS, Reino UnidoPBShop.store UK
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EUR 115,36
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HRD. Condición: New. New Book. Shipped from UK. Established seller since 2000.
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Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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EUR 113,36
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Condición: new.
Introduction to Magnetic Random-Access Memory
Dieny , Bernard (EDT); Goldfarb, Ronald B. (EDT); Lee, Kyung-jin (EDT)
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
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EUR 122,48
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Condición: New.
Introduction to Magnetic Random-Access Memory
Dieny , Bernard (EDT); Goldfarb, Ronald B. (EDT); Lee, Kyung-jin (EDT)
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Como Nuevo
EUR 124,28
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Condición: As New. Unread book in perfect condition.
Introduction to Magnetic Random-Access Memory
Dieny , Bernard (EDT); Goldfarb, Ronald B. (EDT); Lee, Kyung-jin (EDT)
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Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 115,35
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Condición: New.
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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EUR 121,88
Envío por EUR 13,97Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: New. In.
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Librería: Rarewaves.com USA, London, LONDO, Reino UnidoRarewaves.com USA
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EUR 154,48
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Hardback. Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability.… Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
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Librería: THE SAINT BOOKSTORE, Southport, Reino UnidoTHE SAINT BOOKSTORE
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EUR 134,99
Envío por EUR 19,23Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Hardback. Condición: New. New copy - Usually dispatched within 4 working days.
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Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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EUR 148,86
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Condición: New. 250.
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- Primera edición
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrlandaKennys Bookshop and Art Galleries Ltd.
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EUR 152,01
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Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Num Pages…: 264 pages. BIC Classification: TJ; UKS. Category: (P) Professional & Vocational. Dimension: 242 x 158 x 18. Weight in Grams: 574. . 2016. 1st Edition. Hardcover. . . . .
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Librería: Books Puddle, New York, NY, Estados Unidos de AmericaBooks Puddle
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EUR 165,15
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Condición: New. 250.
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Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books
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EUR 174,42
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Hardcover. Condición: Brand New. 1st edition. 264 pages. 9.50x6.50x0.50 inches. In Stock.
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Librería: moluna, Greven, Alemaniamoluna
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EUR 134,10
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Gebunden. Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switc.
Introduction to Magnetic Random-Access Memory
Dieny , Bernard (EDT); Goldfarb, Ronald B. (EDT); Lee, Kyung-jin (EDT)
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Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Como Nuevo
EUR 172,98
Envío por EUR 17,50Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: As New. Unread book in perfect condition.
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Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books
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EUR 163,38
Envío por EUR 29,16Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Hardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Librería: Kennys Bookstore, Olney, MD, Estados Unidos de AmericaKennys Bookstore
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 195,77
Envío por EUR 9,10Se envía dentro de Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Num Pages…: 264 pages. BIC Classification: TJ; UKS. Category: (P) Professional & Vocational. Dimension: 242 x 158 x 18. Weight in Grams: 574. . 2016. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.
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Librería: Rarewaves.com UK, London, Reino UnidoRarewaves.com UK
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 145,32
Envío por EUR 75,81Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Hardback. Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability.… Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
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Librería: THE SAINT BOOKSTORE, Southport, Reino UnidoTHE SAINT BOOKSTORE
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 142,71
Envío por EUR 19,23Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Hardback. Condición: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 574.
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Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books
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EUR 160,57
Envío por EUR 11,66Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 2 disponibles
Hardcover. Condición: Brand New. 1st edition. 264 pages. 9.50x6.50x0.50 inches. In Stock. This item is printed on demand.
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- Primera edición
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Librería: CitiRetail, Stevenage, Reino UnidoCitiRetail
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EUR 130,93
Envío por EUR 43,15Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Hardcover. Condición: new. Hardcover. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and… durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
