Goldfarb ronald b (15 resultados)

Condición: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition. Please note: -May include library or rental stickers, stamps, or markings. -Supplemental materials e.g., CDs, access codes, inserts are not guaranteed. -Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading.…

Condición: good. This is a pre-loved book that shows moderate signs of wear from previous reading. You may notice creases, edge wear, or a cracked spine, but it remains in solid, readable condition. Please note: -May include library or rental stickers, stamps, or markings. -Supplemental materials e.g., CDs, access codes, inserts are not guaranteed. -Box sets may not come with the original outer box. If it does, the box will not be in perfect condition. Your satisfaction is our top priority! If you have any questions or concerns about your order, please don't hesitate to reach out. Thank you for shopping with us and supporting small businessâ"happy reading.…

hardcover. Condición: Very Good.

Condición: New.

Condición: New. 250.

Condición: As New. Unread book in perfect condition.

Condición: New. 250.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: New.

Hardback. Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities. …

Condición: New. In English.

Hardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Hardback. Condición: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities. …

Condición: New. PRINT ON DEMAND 250.