Isbn: 9781107089051 - high current esd: physics and design (15 resultados)

Condición: New.

Hardback. Condición: New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.…

Hardback. Condición: New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.…

Condición: New. 2026. hardcover. . . . . .

Condición: New.

Condición: New. 2026. hardcover. . . . . . Books ship from the US and Ireland.

Hardback. Condición: New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Covering a wide spectrum of semiconductor technologies, this book öers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ¿n ¿eld-e¿ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ¿lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.…

Hardback. Condición: New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.…

Hardcover. Condición: new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

Hardcover. Condición: new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Condición: New. Print on Demand.

Condición: New. PRINT ON DEMAND.

Hardcover. Condición: new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.…

Buch. Condición: Neu. High Current ESD | Charvaka Duvvury (u. a.) | Buch | Englisch | 2026 | Cambridge University Press | EAN 9781107089051 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.