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Sinopsis
Master practical ESD design principles and unlock real-world ESD reliability challenges for advanced semiconductor devices.
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Acerca de los autores
Charvaka Duvvury is a Texas Instruments Fellow-Emeritus and a Life Fellow of the IEEE. He received the Education Award from IEEE-EDS and the Outstanding Contributions Award from the EOS/ESD Association. He is a co-founder and co-chair of the Industry Council on ESD Target Levels.
Harald Gossner is a Senior Principal Engineer at Intel and IEEE Fellow in the field of ESD. He is the recipient of the outstanding achievement award of EOS/ESD Association for his contributions to the field of ESD. He is the cofounder and co-chair of the Industry Council on ESD Target Levels.
Mayank Shrivastava is the Professor & Chair of the Department of Electronic Systems Engineering at the Indian Institute of Science Bangalore. He is also co-founder of a deep-tech semiconductor startup, is an internationally recognized leader in semiconductor technology with over 275 publications, over sixty patents, and more than twenty-five prestigious awards.
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High Current ESD (Hardcover)
Publicado por
Cambridge University Press, Cambridge, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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Librería: Grand Eagle Retail, Bensenville, IL, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Hardcover. Condición: new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Nº de ref. del artículo: 9781107089051
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High Current ESD: Physics and Design
Publicado por
Cambridge University Press, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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Librería: California Books, Miami, FL, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
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High Current ESD
Publicado por
Cambridge University Press, GB, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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Librería: Rarewaves USA, HEBRON, KY, Estados Unidos de America
Calificación del vendedor: 5 de 5 estrellas
Hardback. Condición: New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Nº de ref. del artículo: LU-9781107089051
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High Current ESD: Physics and Design
Publicado por
Cambridge University Press, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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High Current ESD
Publicado por
Cambridge University Press, GB, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
Nuevo
Tapa dura
Librería: Rarewaves.com USA, London, LONDO, Reino Unido
Calificación del vendedor: 5 de 5 estrellas
Hardback. Condición: New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Nº de ref. del artículo: LU-9781107089051
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High Current ESD (Hardcover)
Publicado por
Cambridge University Press, Cambridge, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
Nuevo
Tapa dura
Librería: CitiRetail, Stevenage, Reino Unido
Calificación del vendedor: 5 de 5 estrellas
Hardcover. Condición: new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Nº de ref. del artículo: 9781107089051
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High Current ESD: Physics and Design
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Cambridge University Press, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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High Current ESD: Physics and Design
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Cambridge University Press, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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High Current ESD: Physics and Design
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Cambridge University Press, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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High Current ESD: Physics and Design
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Cambridge University Press, 2026
ISBN 10: 1107089050
ISBN 13: 9781107089051
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Librería: Biblios, Frankfurt am main, HESSE, Alemania
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