9780412146015 - analysis and design of mosfets: modeling, simulation, and parameter extraction (software engineering; 4) de ortiz-conde, adelmo; garcia-sanchez, francisco; juin jei liou (15 resultados)
- Tapa dura
Librería: Buchpark, Trebbin, AlemaniaBuchpark
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Bueno
EUR 55,07
Envío por EUR 105,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Condición: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effec…t transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
- Tapa dura
Librería: La bataille des livres, Pradinas, FranciaLa bataille des livres
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Excelente
EUR 100,00
Envío por EUR 60,00Se envía de Francia a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Condición: Très bon. Analysis and Design of Mosfets: Modeling, Simulation, and Parameter Extraction | Liou et alii | Kluwer Academic Publishers, 1998, in-8 cartonnage éditeur, 349 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares e…t discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT18] Pour les expéditions internationales, nous consulter au préalable pour l ajustement des frais de port qui seront peut-être revus à la baisse/ For international shipments, please contact us in advance to adjust shipping costs. |.
- Tapa dura
Librería: Buchpark, Trebbin, AlemaniaBuchpark
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Bueno
EUR 55,07
Envío por EUR 105,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 3 disponibles
Condición: Gut. Zustand: Gut | Seiten: 372 | Sprache: Englisch | Produktart: Bücher | Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effec…t transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Juin Jei Liou; Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco
- Tapa dura
Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 166,50
Envío por EUR 14,05Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: New. In.
- Tapa dura
Librería: Books Puddle, New York, NY, Estados Unidos de AmericaBooks Puddle
Contactar con el vendedorVendedor de 4 estrellasCondición: Nuevo
EUR 182,73
Envío por EUR 3,51Se envía dentro de Estados Unidos de AmericaCantidad disponible: 1 disponibles
Condición: New. pp. 372.
- Tapa dura
Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
Contactar con el vendedorVendedor de 4 estrellasCondición: Nuevo
EUR 192,41
Envío por EUR 7,62Se envía de Reino Unido a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Condición: New. pp. 372 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction (Software Engineering; 4)
Juin Jei Liou; Ortiz-Conde, Adelmo; Garcia-Sanchez, Francisco
- Tapa dura
Librería: BennettBooksLtd, Los Angeles, CA, Estados Unidos de AmericaBennettBooksLtd
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 205,54
Envío por EUR 6,11Se envía dentro de Estados Unidos de AmericaCantidad disponible: 1 disponibles
hardcover. Condición: New. In shrink wrap. Looks like an interesting title.
Analysis and Design of MOSFETs
Liou, J.J.; Ortiz-Conde, Adelmo (Electronics Engineering Dept., University of Simon Bolivar, Caracas, Venezuela); Garcia-Sanchez, Francisco (Electron
- Tapa dura
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrlandaKennys Bookshop and Art Galleries Ltd.
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 202,76
Envío por EUR 10,50Se envía de Irlanda a Estados Unidos de AmericaCantidad disponible: 15 disponibles
Condición: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Prof…essional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . .
- Tapa dura
Librería: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, AlemaniaBUCHSERVICE / ANTIQUARIAT Lars Lutzer
Contactar con el vendedorVendedor de 5 estrellasCondición: Usado - Bueno
EUR 189,90
Envío por EUR 39,95Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Hardcover. Condición: gut. 1998. Analysis and Design of MOSFETs In englischer Sprache. pages.
- Tapa dura
Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 168,73
Envío por EUR 63,62Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transisto…r (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Analysis and Design of MOSFETs
Liou, J.J.; Ortiz-Conde, Adelmo (Electronics Engineering Dept., University of Simon Bolivar, Caracas, Venezuela); Garcia-Sanchez, Francisco (Electron
- Tapa dura
Librería: Kennys Bookstore, Olney, MD, Estados Unidos de AmericaKennys Bookstore
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 258,20
Envío por EUR 9,22Se envía dentro de Estados Unidos de AmericaCantidad disponible: 15 disponibles
Condición: New. Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations. Num Pages: 349 pages, biography. BIC Classification: TJFD5. Category: (P) Prof…essional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 22. Weight in Grams: 1540. . 1998. Hardback. . . . . Books ship from the US and Ireland.
- Tapa dura
- Impresión bajo demanda
Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 160,49
Envío por EUR 23,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 2 disponibles
Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-…effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology. 372 pp. Englisch.
- Tapa dura
- Impresión bajo demanda
Librería: moluna, Greven, Alemaniamoluna
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 136,16
Envío por EUR 48,99Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: Más de 20 disponibles
Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxid…e semiconductor fie.
- Tapa dura
- Impresión bajo demanda
Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 160,49
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effe…ct transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers.Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 372 pp. Englisch.
- Tapa dura
- Impresión bajo demanda
Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios
Contactar con el vendedorVendedor de 4 estrellasCondición: Nuevo
EUR 230,09
Envío por EUR 9,95Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 4 disponibles
Condición: New. PRINT ON DEMAND pp. 372.
