Treitinger ludwig (13 resultados)
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Librería: Chiron Media, Wallingford, Reino UnidoChiron Media
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PF. Condición: New.
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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EUR 60,98
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Condición: New. In.
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Librería: Books Puddle, New York, NY, Estados Unidos de AmericaBooks Puddle
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EUR 77,36
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Condición: New. pp. 184.
Ultra-Fast Silicon Bipolar Technology
Treitinger, Ludwig (Edited by)/ Miura-Mattausch, Mitiko (Edited by)
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Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books
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EUR 77,35
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Paperback. Condición: Brand New. reprint edition. 176 pages. 9.25x6.10x0.40 inches. In Stock.
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Librería: moluna, Greven, Alemaniamoluna
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EUR 48,37
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Condición: New.
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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EUR 53,49
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memorie…s has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
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Librería: Antiquariat Bookfarm, Löbnitz, AlemaniaAntiquariat Bookfarm
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EUR 161,40
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Hardcover. Condición: Gut. IX, 167 S. Ex-library with stamp and library-signature. GOOD condition, some traces of use. C-02260 3540506381 Sprache: Englisch Gewicht in Gramm: 550.
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Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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EUR 46,22
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Condición: new. Questo è un articolo print on demand.
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Librería: Basi6 International, Irving, TX, Estados Unidos de AmericaBasi6 International
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EUR 60,92
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Condición: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
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Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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EUR 77,07
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Condición: New. Print on Demand pp. 184 125 Figures, 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
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Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios
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EUR 79,12
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Condición: New. PRINT ON DEMAND pp. 184.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 85,55
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor…(MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication. 184 pp. Englisch.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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EUR 53,49
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOS…FET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 184 pp. Englisch.
