Sumino k (18 resultados)
Defects and Properties of Semiconductors: Defect Engineering (Advances in Solid State Technology, 3)
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EUR 72,49
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Condición: very_good. Gently read. May have name of previous ownership, or ex-library edition. Binding tight; spine straight and smooth, with no creasing; covers clean and crisp. Minimal signs of handling or shelving. 100% GUARANTEE! Shipped with delivery confirmation, if you're not satisfied with purchase please return item! Sh…ips USPS Media Mail.
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
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EUR 73,56
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Librería: Basi6 International, Irving, TX, Estados Unidos de AmericaBasi6 International
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EUR 75,93
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Condición: Brand New. New. Delivery takes 25-30 days. Excellent Customer Service.
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- Primera edición
Librería: Amnesty Bookshop, Malvern, Great Malvern, Reino UnidoAmnesty Bookshop, Malvern
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EUR 53,06
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Hb without Dj. Condición: Fine. First Edition. Contains nearly all the papers presented at the Symposium on "Defects and Qualities of Semiconductors" held in Tokyo in May 1984. In immaculate condition throughout. All profits to Amnesty International. Size: 15.5cm - 23.3cm with 261pp.
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
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EUR 84,96
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Condición: As New. Unread book in perfect condition.
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Librería: California Books, Miami, FL, Estados Unidos de AmericaCalifornia Books
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EUR 92,03
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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EUR 79,78
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Condición: New. In.
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EUR 78,20
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EUR 87,50
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Condición: As New. Unread book in perfect condition.
Defects and Properties of Semiconductors: Defect Engineering
Chikawa, J. (Editor) / Sumino, K. (Editor) / Wada, K. (Editor)
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Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books
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EUR 112,26
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Paperback. Condición: Brand New. 272 pages. 9.02x5.99x0.62 inches. In Stock.
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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EUR 80,15
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was…organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Idioma: Inglés
Editorial: North-Holland, Amsterdam / New York / Oxford / Tokyo, 1990
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- Primera edición
Librería: About Books, Henderson, NV, Estados Unidos de AmericaAbout Books
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EUR 250,13
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Hardcover. Condición: New. Estado de la sobrecubierta: No dust jackets, as issued. First Editions. Amsterdam / New York / Oxford / Tokyo: North-Holland, 1990. New and unread. NOT a library discard. Complete in 2 huge volumes. Volume 1: xxviii, 972pp, xliv (author/subject index). Volume 2: xxvii, pp. 975 - 1,746, xxix-xliv (repea…t of same author/subject index). NO owner's name or bookplate. NOT a remainder. Sharp corners. Pages are crisp, clean and unmarked. NO underlining. NO highlighting. NO margin notes. Illustrated with figures, photos, charts, graphs, equations, etc. The two volumes are uniformly bound in the original gray and green cloth, stamped in yellow, white, green and black. From the publisher: "Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc. The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects." Two Oversize Hardcover volumes. This large, VERY heavy 2-volume set (over 10 pounds before packaging) will require SUBSTANTIAL extra postage for International shipments, but only the standard 1-volume charge for priority or media mail. . First Editions. Oversize Hardcover. New/No dust jackets, as issued. Illus. by NOT a library discard. 2 volumes, complete. Great Packaging, Fast Shipping. NOT a library discard (ilustrador).
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Librería: books4less (Versandantiquariat Petra Gros GmbH & Co. KG), Welling, Alemaniabooks4less (Versandantiquariat Petra Gros GmbH & Co. KG)
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EUR 288,00
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gebundene Ausgabe. Condición: Gut. 1746 Seiten; durchgehende Zählung; Der Erhaltungszustand des hier angebotenen Werks ist trotz seiner Bibliotheksnutzung sehr sauber. Es befindet sich neben dem Rückenschild lediglich ein Bibliotheksstempel im Buch; ordnungsgemäß entwidmet. In ENGLISCHER Sprache. KOMPLETTPREIS für 2 Bände; bei V…ersand außerhalb der EU erfragen Sie bitte zuerst die Versandkosten; Sprache: Englisch Gewicht in Gramm: 4600.
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Librería: BUCHSERVICE / ANTIQUARIAT Lars Lutzer, Wahlstedt, AlemaniaBUCHSERVICE / ANTIQUARIAT Lars Lutzer
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EUR 799,90
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Condición: gut. 1990. Defect Control in Semiconductors: Proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors The Yokohama 21st Century Forum Yokohama, Japan, September 17-22, 1989 (2 vols.set/ 2 Bände KOMPLETT) In englischer Sprache. pages.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 74,89
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. Th…e Symposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan. 272 pp. Englisch.
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Librería: moluna, Greven, Alemaniamoluna
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EUR 65,94
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This volume contains nearly all of the papers presented at the Symposium on Defects and Qualities of Semiconductors which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL T…ECHNOLOGY. The Symposium was organized.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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EUR 74,89
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Sy…mposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 272 pp. Englisch.
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Librería: preigu, Osnabrück, Alemaniapreigu
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EUR 68,45
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Taschenbuch. Condición: Neu. Defects and Properties of Semiconductors | Defect Engineering | J. Chikawa (u. a.) | Taschenbuch | Advances in Solid State Technology | 300 S. | Englisch | 2011 | Springer | EAN 9789401086165 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]h…artmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
