s a grinberg (25 resultados)

gebundene Ausgabe. Condición: Gut. 390 Seiten Das hier angebotene Buch stammt aus einer teilaufgelösten Bibliothek und kann entsprechende Kennzeichnungen aufweisen (Rückenschild, Instituts-Stempel.). Aufgrund des Alters und der häufigen Nutzung können Stabilität, Einband sowie Papierqualität beeinträchtigt sein. Sprache: Deutsch Gewicht in Gramm: 750.

Hardcover. Condición: UsedVeryGood. Hardcover, Volume 19 only; translated by Dennis W. Wester; fading and shelf wear to exterior; corners bumped; otherwise in very good condition with clean text, firm binding.

Hardcover. Condición: new. Hardcover. This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical. This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

HardBack. No jacket.

Condición: New. In.

PF. Condición: New.

Condición: New. pp. 240.

Paperback. Condición: Brand New. 238 pages. 11.00x8.30x0.60 inches. In Stock.

Hardcover. Condición: new. Hardcover. This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical. This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Couverture souple. Condición: Satisfaisant. FRINDLYAND S.; MIKOULINA E.; TCHEMKO V.; CHOKINE L.; GRINBERG A.; PENSON M.; TELECHOV A.; PERINE L; PROZOROVSKIY N.; LANDSBERG L.; ANDREEV N.; KHEYLIG E. Ilustrador. Revue soviétique publiée de 1926 à 1997, avec interruption de 1942 à 1956 contenant des photos de photographes soviétiques amateurs et professionnels. Agrafé. 24,7 x 18,8 cm. Texte russe. Pagination de 193 à 236 [4]. INCOMPLET : PAGES 209-212, 221-222 MANQUANTES. Photo sur couverture par P. NOVITSKIY. Nombreuses photos en n/b (par FRINDLYAND S.; MIKOULINA E.; TCHEMKO V.; CHOKINE L.; GRINBERG A.; PENSON M.; TELECHOV A.; PERINE L; PROZOROVSKIY N.; LANDSBERG L.; ANDREEV N.; KHEYLIG E. (photographe-ouvrier amateur allemand). ETAT SATISFAISANT. Agrafes rouillées. Coins de la couverture un peu frottés. Dos partiellement fendu en bas, petite déchirure en tête du dos. Léger pli aux coins inférieur des premières pages.

Taschenbuch. Condición: Neu. Growth of Crystals | E. I. Givargizov (u. a.) | Taschenbuch | Growth of Crystals | 238 S. | Englisch | 2012 | Springer | EAN 9781461571278 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).

Hardcover. Condición: New. Language:Chinese.HardCover. Pub Date: 2015-2-1 Pages: 96 Publisher: Chemical Industry Press This book is a front for school children and primary school children in the lower grades encyclopedia. The book selected basic scientific knowledge of interest to children. including aspects of the natural. cultural. and life. with beautiful illustrations in plain text to a small audience interpretation of the wonderful world. The book has a lot of folding. folding open will find many surprises. By rea.

Condición: new. Questo è un articolo print on demand.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions. 202 pp. Englisch.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical. 211 pp. Englisch.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications). 240 pp. Englisch.

Paperback / softback. Condición: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.

Condición: New. Print on Demand pp. 240 6:B&W 8.25 x 11 in or 280 x 210 mm Perfect Bound on White w/Gloss Lam.

Condición: New. PRINT ON DEMAND pp. 240.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is.

Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the c.

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 240 pp. Englisch.