Liu hsuan (23 resultados)

Paperback. Condición: Fair. Traditional character ed. The item might be beaten up but readable. May contain markings or highlighting, as well as stains, bent corners, or any other major defect, but the text is not obscured in any way.

Condición: As New. Like New condition. A near perfect copy that may have very minor cosmetic defects.

Hardcover. Condición: Fair. No Jacket. Readable copy. Pages may have considerable notes/highlighting. ~ ThriftBooks: Read More, Spend Less.

Condición: good. Supports Goodwill of Silicon Valley job training programs. The cover and pages are in Good condition! Any other included accessories are also in Good condition showing use. Use can include some highlighting and writing, page and cover creases as well as other types visible wear.

Soft cover. Condición: Very Good. 102 pages. Illustrated. Hsiao Kuan-hung "A Young Pathbreaker" / Chou Yung-chuang "Out to Learn" / Li Hui-hsin "The Girl in the Mountains" / Liu Yang and Hua Tung "Ideals in Life" / Cheng Hsuan and Yi Shih "A New Teacher" (SL#282/1).

Soft Cover. Condición: Good. First Edition. Text is in Chinese. Spine area has age browning; spine is chipped; volume has wear; text clean. [220] p. [otob: 43].

Condición: New. Satisfaction Guaranteed or your money back.

hardcover. Condición: Very Good.

Condición: New.

Condición: New.

Condición: New. 318 pp., hardcover, new. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country. Photos available upon request.…

Condición: As New. Unread book in perfect condition.

Condición: New.

Condición: New. In English.

Condición: As New. Unread book in perfect condition.

Hardcover. Condición: Brand New. 350 pages. 9.25x6.10x9.21 inches. In Stock.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.…

Taschenbuch. Condición: Neu. Circuit-Technology Co-Optimization of SRAM Design in Advanced CMOS Nodes | Hsiao-Hsuan Liu (u. a.) | Taschenbuch | xviii | Englisch | 2025 | Springer | EAN 9783031761119 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

hardcover. Condición: Good. Good. Dust Jacket NOT present. CD WILL BE MISSING. . SHIPS FROM MULTIPLE LOCATIONS. book.

Condición: new. Questo è un articolo print on demand.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss.In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes. 288 pp. Englisch.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt.

Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Modern computing engines-CPUs, GPUs, and NPUs-require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 308 pp. Englisch.…