Hazra arnab (37 resultados)

Condición: New. pp. xiv + 222.

Condición: New. pp. xiv + 222 1st Edition.

Condición: New. pp. xiv + 222.

Hardcover. Condición: New. Paperback. An unused, unmarked and unblemished copy.; 100% Satisfaction Guaranteed! Ships same or next business day.

Condición: New. pp. 330 Figures.

Condición: New. pp. 330 Index 1st Published.

Condición: New.

Condición: New.

Hardcover. Condición: Very Good. 1. Auflage. Unread, cover with shelfwear or minor damages. Immediately dispatched from Germany.

Taschenbuch. Condición: Neu. Resistive Random Access Memory | The New Generation High Speed Switching Non-Volatile Memory Device | Arnab Hazra | Taschenbuch | 96 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783848488322 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Condición: New.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: As New. Unread book in perfect condition.

Condición: New. In English.

Condición: New. In English.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intended to address multiple aspects of carbon research in a single compiled edition. It targets professors, scientists and researchers belonging to the areas of physics, chemistry, engineering, biology and medicine, and working on theory, experiment and applications of carbon nanomaterials.…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intended to address multiple aspects of carbon research in a single compiled edition. It targets professors, scientists and researchers belonging to the areas of physics, chemistry, engineering, biology and medicine, and working on theory, experiment and applications of carbon nanomaterials.…

Condición: New. 1st ed. 2021 edition NO-PA16APR2015-KAP.

Condición: New.

Hardcover. Condición: Brand New. 455 pages. 9.25x6.10x1.00 inches. In Stock.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book. 96 pp. Englisch. …

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book. …

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hazra ArnabArnab Hazra received his M-Tech degree in Electronics in the specialization of VLSI Design from Bengal Engineering and Science University, Shibpur,India in 2011. He is presently a PhD scholar in the Dept. of Electronics & . …

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 96 pp. Englisch. …

Condición: new. Questo è un articolo print on demand.

Condición: new. Questo è un articolo print on demand.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents novel research work written by expert professionals&nbspCovers diverse aspects of carbon nanomaterial research&nbspIncludes specific chapters on graphene, carbon nanotubes, and carbon compositesArn.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applicati.…

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intended to address multiple aspects of carbon research in a single compiled edition. It targets professors, scientists and researchers belonging to the areas of physics, chemistry, engineering, biology and medicine, and working on theory, experiment and applications of carbon nanomaterials. 456 pp. Englisch.…