Foord john s (25 resultados)

Condición: New.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: As New. Unread book in perfect condition.

Condición: New. 2020. 1st Edition. Hardcover. . . . . .

Condición: New. Brand new! Please provide a physical shipping address.

Condición: New.

Condición: New. 2020. 1st Edition. Hardcover. . . . . . Books ship from the US and Ireland.

HRD. Condición: New. New Book. Shipped from UK. Established seller since 2000.

Condición: New.

Condición: New.

Condición: new.

Condición: As New. Unread book in perfect condition.

Condición: As New. Unread book in perfect condition.

Condición: New. In English.

Condición: New.

Condición: New. Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for.

Condición: New. Chemical beam epitaxy is a method of growing semiconductor layers which has wide-ranging application in the international electronics and opto-electronic industries. Editor(s): Foord, J.S.; Davies, G.J.; Tsang, W.T. Num Pages: 460 pages, Illustrations. BIC Classification: PHFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 242 x 160 x 32. Weight in Grams: 844. . 1997. 1st Edition. Paperback. . . . . …

Condición: New. pp. 460.

Condición: New. pp. 460.

Buch. Condición: Neu. Neuware - Die Strahlepitaxie (Chemical Beam Epitaxy) ist eine relativ neue Methode der Herstellung von Halbleiterschichten. Hier erfahren Sie alles Wichtige rund um dieses Verfahren: Ausrüstung, chemische Mechanismen, Eigenschaften verschiedener Halbleitermaterialien. Für Interessenten aus Physik, Elektronik und Elektrotechnik.…

Paperback. Condición: Brand New. 1st edition. 460 pages. 9.75x6.50x1.50 inches. In Stock.

Condición: New. Chemical beam epitaxy is a method of growing semiconductor layers which has wide-ranging application in the international electronics and opto-electronic industries. Editor(s): Foord, J.S.; Davies, G.J.; Tsang, W.T. Num Pages: 460 pages, Illustrations. BIC Classification: PHFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 242 x 160 x 32. Weight in Grams: 844. . 1997. 1st Edition. Paperback. . . . . Books ship from the US and Ireland. …

Hardcover. Condición: new. Hardcover. Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers. Chemical beam epitaxy is a method of growing semiconductor layers which has wide-ranging application in the international electronics and opto-electronic industries. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Paperback. Condición: Brand New. 1st edition. 460 pages. 9.75x6.50x1.50 inches. In Stock. This item is printed on demand.