Felix levinzon (28 resultados)

Condición: New.

Condición: New.

Condición: New. In English.

Paperback. Condición: New.

Condición: New.

Condición: New. In English.

Condición: New.

Paperback. Condición: Brand New. reprint edition. 188 pages. 9.25x6.10x0.45 inches. In Stock.

Condición: New. pp. 169.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/ Hz). The discussion also includes ultra-low-noise (at level of 3 ng/ Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.- Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;- Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;- Describes recently design of ultra-low-noise (at level of 3 ng/ Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers;- Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/ Hz) JFET;- Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.…

Condición: New. pp. 188.

Condición: As New. Unread book in perfect condition.

Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condición: As New. Unread book in perfect condition.

Hardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condición: new. Questo è un articolo print on demand.

Condición: new. Questo è un articolo print on demand.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/ Hz). The discussion also includes ultra-low-noise (at level of 3 ng/ Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.- Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;- Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;- Describes recently design of ultra-low-noise (at level of 3 ng/ Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers;- Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/ Hz) JFET;- Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics. 188 pp. Englisch.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensorsIncludes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and no.…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/¿Hz). The discussion also includes ultra-low-noise (at level of 3 ng/¿Hz) seismic IEPE accelerometers and high temperature (up to 175 ¿C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.¿ Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;¿ Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;¿ Describes recently design of ultra-low-noise (at level of 3 ng/¿Hz) IEPE seismic accelerometers and high temperature (up to 175 ¿C) triaxial and single axis miniature IEPE accelerometers;¿ Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/¿Hz) JFET;¿ Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 188 pp. Englisch. …

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/ Hz). The discussion also includes ultra-low-noise (at level of 3 ng/ Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.- Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;- Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;- Describes recently design of ultra-low-noise (at level of 3 ng/ Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers;- Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/ Hz) JFET;- Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics. 188 pp. Englisch.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensorsIncludes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and no.…

Condición: New. Print on Demand pp. 169.

Condición: New. PRINT ON DEMAND pp. 169.

Condición: New. Print on Demand pp. 188 99 Illus. (37 Col.).

Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/¿Hz). The discussion also includes ultra-low-noise (at level of 3 ng/¿Hz) seismic IEPE accelerometers and high temperature (up to 175 ¿C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.¿ Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;¿ Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;¿ Describes recently design of ultra-low-noise (at level of 3 ng/¿Hz) IEPE seismic accelerometers and high temperature (up to 175 ¿C) triaxial and single axis miniature IEPE accelerometers;¿ Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/¿Hz) JFET;¿ Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 188 pp. Englisch.…

Condición: New. PRINT ON DEMAND pp. 188.

Buch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book provides an invaluable reference to Piezoelectric Accelerometers with Integral Electronics (IEPE). It describes the design and performance parameters of IEPE accelerometers and their key elements, PE transducers and FET-input amplifiers. Coverage includes recently designed, low-noise and high temperature IEPE accelerometers. Readers will benefit from the detailed noise analysis of the IEPE accelerometer, which enables estimation of its noise floor and noise limits. Other topics useful for designers of low-noise, high temperature silicon-based electronics include noise analysis of FET amplifiers, experimental investigation and comparison of low-frequency noise in different JFETs and MOSFETs, and ultra-low-noise JFETs (at level of 0.6 nV/ Hz). The discussion also includes ultra-low-noise (at level of 3 ng/ Hz) seismic IEPE accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers, along with key factors for their design.- Provides a comprehensive reference to the design and performance of IEPE accelerometers, including low-noise and high temperature IEPE sensors;- Includes noise analysis of the IEPE accelerometer, which enables estimation of the its noise floor and noise limits;- Describes recently design of ultra-low-noise (at level of 3 ng/ Hz) IEPE seismic accelerometers and high temperature (up to 175 C) triaxial and single axis miniature IEPE accelerometers;- Compares low-frequency noise in different JFETs and MOSFETs including measurement results of ultra-low-noise (at level of 0.6 nV/ Hz) JFET;- Presents key factors for design of low-noise and high temperature IEPE accelerometer and their electronics.…