Semiconductor device modelling de snowden (52 resultados)

paperback. Condición: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

Hardcover. Condición: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover.

Condición: New.

Paperback or Softback. Condición: New. Introd to Semiconductor Device Modelling. Book.

Paperback. Condición: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.…

Condición: As New. Unread book in perfect condition.

Condición: New.

Condición: New.

Paperback. Condición: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

Hardcover. Condición: Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.

Condición: New. In English.

Condición: New.

Condición: New. In English.

PF. Condición: New.

Condición: Gebraucht / Used. 1986. Hardcover. xv,222pp.

Condición: As New. Unread book in perfect condition.

Condición: New. pp. 300.

Good. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.

Paperback. Condición: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.

Paperback. Condición: Brand New. 296 pages. 9.25x6.10x0.68 inches. In Stock.

Condición: New.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: New. In English.

Condición: New.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.…

Condición: Gut. Zustand: Gut | Seiten: 232 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Condición: As New. Unread book in perfect condition.

Condición: New.

Condición: New. In English.