9789401775953 - variation-aware advanced cmos devices and sram: 56 (springer series in advanced microelectronics, 56) de shin, changhwan (11 resultados)
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Editorial: Springer, 2016
Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and wo…rk-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
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Condición: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation,… and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
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Editorial: Springer, 2016
Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Editorial: Springer, 2016
Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Librería: Basi6 International, Irving, TX, Estados Unidos de AmericaBasi6 International
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Condición: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
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Idioma: Inglés
Editorial: Springer Netherlands Jun 2016, 2016
Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-flu…ctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM. 148 pp. Englisch.
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Editorial: Springer, 2016
Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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Editorial: Springer, 2016
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Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios
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Idioma: Inglés
Editorial: Springer Netherlands, 2016
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Librería: moluna, Greven, Alemaniamoluna
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Offers an insightful overview of the key techniques in variation-immune CMOS device designs Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random variations includin…g line-edge-roughness, random.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctua…tion, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM.The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 148 pp. Englisch.
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Idioma: Inglés
Editorial: Springer, 2016
Serie: Libro 60 de 72 - Springer Series in Advanced Microelectronics
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Librería: preigu, Osnabrück, Alemaniapreigu
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Buch. Condición: Neu. Variation-Aware Advanced CMOS Devices and SRAM | Changhwan Shin | Buch | vii | Englisch | 2016 | Springer | EAN 9789401775953 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
