Isbn: 9789401069007 - heterostructures on silicon: one step further with silicon: 160 (nato science series e:) (11 resultados)

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  • Idioma: Inglés

    Editorial: Springer, 2011

    940106900X / 9789401069007

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    Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections

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    Condición: New. In English.

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    Editorial: Springer 2011-09, 2011

    940106900X / 9789401069007

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    Librería: Chiron Media, Wallingford, Reino UnidoChiron Media

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    PF. Condición: New.

  • Idioma: Inglés

    Editorial: Springer, 2011

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    Librería: Books Puddle, New York, NY, Estados Unidos de AmericaBooks Puddle

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    EUR 81,32

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    Cantidad disponible: 4 disponibles

    Condición: New. pp. 380.

  • Idioma: Inglés

    Editorial: Springer, 2011

    940106900X / 9789401069007

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    Librería: Revaluation Books, Exeter, Reino UnidoRevaluation Books

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    EUR 81,01

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    Cantidad disponible: 2 disponibles

    Paperback. Condición: Brand New. 380 pages. 9.25x6.10x0.86 inches. In Stock.

  • Idioma: Inglés

    Editorial: Springer Netherlands, 2011

    940106900X / 9789401069007

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    Librería: moluna, Greven, Alemaniamoluna

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    Condición: New.

  • Idioma: Inglés

    Editorial: Springer, Springer, 2011

    940106900X / 9789401069007

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    Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH

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    Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10' e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing . ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

  • Idioma: Inglés

    Editorial: Springer, 2011

    940106900X / 9789401069007

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    Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    Condición: new. Questo è un articolo print on demand.

  • Idioma: Inglés

    Editorial: Springer Netherlands, Springer Netherlands Sep 2011, 2011

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    Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.

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    Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10' e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing . ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985. 380 pp. Englisch.

  • Idioma: Inglés

    Editorial: Springer, 2011

    940106900X / 9789401069007

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    Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books

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    EUR 79,83

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    Condición: New. Print on Demand pp. 380 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.

  • Idioma: Inglés

    Editorial: Springer, 2011

    940106900X / 9789401069007

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    Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios

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    EUR 80,85

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    Condición: New. PRINT ON DEMAND pp. 380.

  • Idioma: Inglés

    Editorial: Springer, Springer Sep 2011, 2011

    940106900X / 9789401069007

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    Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000

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    Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10' e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing . ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 380 pp. Englisch.