9783844332636 - an improved markov random field design approach for digital circuits: introducing fault-tolerance with higher noise-immunity for the nano-circuits as compared to cmos and mrf designs de anwer, jahanzeb; hisham bin hamid, nor; sagayan asirvadam, vijanth (9 resultados)
An Improved Markov Random Field Design Approach For Digital Circuits
Nor Hisham Bin Hamid Vijanth Sagayan Asirvadam Jahanzeb Anwer
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Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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Taschenbuch. Condición: Neu. An Improved Markov Random Field Design Approach For Digital Circuits | Introducing Fault-Tolerance With Higher Noise-Immunity For The Nano-Circuits As Compared To CMOS And MRF Designs | Jahanzeb Anwer (u. a.) | Taschenbuch | 88 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 978384433263…6 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.
An Improved Markov Random Field Design Approach For Digital Circuits: Introducing Fault-Tolerance With Higher Noise-Immunity For The Nano-Circuits As Compared To CMOS And MRF Designs
Anwer, Jahanzeb, Hisham Bin Hamid, Nor, Sagayan Asirvadam, V
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable cir…cuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives. 88 pp. Englisch.
An Improved Markov Random Field Design Approach For Digital Circuits
Hisham Bin Hamid Nor Sagayan Asirvadam Vijanth Anwer Jahanzeb
Idioma: Inglés
Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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An Improved Markov Random Field Design Approach For Digital Circuits
Jahanzeb Anwer|Nor Hisham Bin Hamid|Vijanth Sagayan Asirvadam
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Anwer JahanzebThe authors work under the banner of fault-tolerance research group in Universiti Teknologi PETRONAS (UTP). The group is conducting research on various aspects of fault-tolerant circuit de…sign with the support of UTP an.
An Improved Markov Random Field Design Approach For Digital Circuits
Hisham Bin Hamid Nor Sagayan Asirvadam Vijanth Anwer Jahanzeb
Idioma: Inglés
Editorial: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
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Condición: New. PRINT ON DEMAND pp. 88.
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit… components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 88 pp. Englisch.
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Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit…components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives.
