Isbn: 9783659979378 - optoelectronic properties of gaussian dqwell for rtd application (9 resultados)

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Taschenbuch. Condición: Neu. Optoelectronic Properties of Gaussian DQWell for RTD Application | Arpan Deyasi (u. a.) | Taschenbuch | 204 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659979378 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices. 204 pp. Englisch. …

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Deyasi ArpanArpan Deyasi is presently working as Asst Prof in the Dept of ECE in RCCIIT, INDIA. He has 11.5 years of professional experience. He received B.Sc(Hons), B.Tech, M.Tech from University of Calcutta. He is working in the ar. …

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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 204 pp. Englisch.…