Isbn: 9783659566264 - remedies of short channel effects in conventional mosfet: a parameter modeling study (9 resultados)

Condición: New. pp. 76.

Taschenbuch. Condición: Neu. Remedies of Short Channel Effects in Conventional MOSFET | A parameter modeling study | Swapnadip De (u. a.) | Taschenbuch | 76 S. | Englisch | 2014 | LAP LAMBERT Academic Publishing | EAN 9783659566264 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

paperback. Condición: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobility degradation and surface scattering, velocity saturation in MOSFET, avalanche breakdown, hot electron effect, drain induced barrier lowering(DIBL), reduction of threshold voltage, punch through. These drawbacks are known as Short Channel Effect(SCE).The model of double halo dual material gate combines the advantages of both the channel engineering (halo) and the gate engineering techniques (dual-material gate) to effectively suppress the short-channel effects (SCEs). The model is derived using the pseudo-2D analysis by applying the Gauss's law to an elementary rectangular box in the channel depletion region, considering the surface potential variation with the channel depletion layer depth. 76 pp. Englisch.…

Condición: New. Print on Demand pp. 76 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condición: New. PRINT ON DEMAND pp. 76.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: De SwapnadipDr. Swapnadip De is working as Asst. Professor in ECE Department of Meghnad Saha Institute of Technology for the last 12 years. He obtained his PhD degree from Jadavpur University under the guidance of Prof. C.K.Sarkar. H.…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobility degradation and surface scattering, velocity saturation in MOSFET, avalanche breakdown, hot electron effect, drain induced barrier lowering(DIBL), reduction of threshold voltage, punch through. These drawbacks are known as Short Channel Effect(SCE).The model of double halo dual material gate combines the advantages of both the channel engineering (halo) and the gate engineering techniques (dual-material gate) to effectively suppress the short-channel effects (SCEs). The model is derived using the pseudo-2D analysis by applying the Gauss's law to an elementary rectangular box in the channel depletion region, considering the surface potential variation with the channel depletion layer depth.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobility degradation and surface scattering, velocity saturation in MOSFET, avalanche breakdown, hot electron effect, drain induced barrier lowering(DIBL), reduction of threshold voltage, punch through. These drawbacks are known as Short Channel Effect(SCE).The model of double halo dual material gate combines the advantages of both the channel engineering (halo) and the gate engineering techniques (dual-material gate) to effectively suppress the short-channel effects (SCEs). The model is derived using the pseudo-2D analysis by applying the Gauss's law to an elementary rectangular box in the channel depletion region, considering the surface potential variation with the channel depletion layer depth.…