ISBN: 9783639819212 - functionalized inn isfet for dna hybridization detection: inn biosensor (6 resultados)

Paperback. Condición: Brand New. 108 pages. 8.66x5.91x0.25 inches. In Stock.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. A drain-source current decrease(~6 uA) was observed due to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished, while the noncomplementary DNA with one base mismatch did not show any obvious current variation. 108 pp. Englisch.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. A drain-source current decrease(~6 uA) was observed due to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished, while the noncomplementary DNA with one base mismatch did not show any obvious current variation.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. &Uumlber den AutorrnrnI joined IBM as a Device Characterization Engineer. I graduated from Electrical Engineering at UCLA. While I was a graduate student at National Tsing Hua University, I was inspired to conduct a study of 10nm InN ISFET for . …

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. A drain-source current decrease(~6 uA) was observed due to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished, while the noncomplementary DNA with one base mismatch did not show any obvious current variation.OmniScriptum SRL, Str. Armeneasca 28/1, office 1, 2012 Chisinau 108 pp. Englisch.…

Taschenbuch. Condición: Neu. Functionalized InN ISFET for DNA Hybridization Detection | InN Biosensor | Lin Cheng-Yi | Taschenbuch | Englisch | 2015 | ¿¿¿¿¿¿¿ | EAN 9783639819212 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand. …