9783031013782 - transient electro-thermal modeling on power semiconductor devices (synthesis lectures on power electronics) de du, bin; hudgins, jerry; gachovska, tanya kirilova (12 resultados)
Transient Electro-Thermal Modeling on Power Semiconductor Devices (Synthesis Lectures on Power Electronics)
Gachovska, Tanya Kirilova; Hudgins, Jerry; Du, Bin; Santi, Enrico
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Transient Electro-Thermal Modeling on Power Semiconductor Devices (Synthesis Lectures on Power Electronics)
Gachovska, Tanya Kirilova; Hudgins, Jerry; Du, Bin; Santi, Enrico
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Sem…iconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
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Taschenbuch. Condición: Neu. Transient Electro-Thermal Modeling on Power Semiconductor Devices | Tanya Kirilova Gachovska (u. a.) | Taschenbuch | Synthesis Lectures on Power Electronics | xvi | Englisch | 2013 | Springer | EAN 9783031013782 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heide…lberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Condición: new. Questo è un articolo print on demand.
Transient Electro-Thermal Modeling on Power Semico
Gachovska, Tanya Kirilova; Hudgins, Jerry; Du, Bin; Santi, Enrico
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Librería: Basi6 International, Irving, TX, Estados Unidos de AmericaBasi6 International
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Transient Electro-Thermal Modeling on Power Semiconductor Devices (Synthesis Lectures on Power Electronics)
Gachovska, Tanya Kirilova; Hudgins, Jerry; Du, Bin; Santi, Enrico
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Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of B…ipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device. 88 pp. Englisch.
Transient Electro-Thermal Modeling on Power Semiconductor Devices (Synthesis Lectures on Power Electronics)
Gachovska, Tanya Kirilova; Hudgins, Jerry; Du, Bin; Santi, Enrico
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Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios
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Transient Electro-Thermal Modeling on Power Semiconductor Devices
Gachovska, Tanya Kirilova|Hudgins, Jerry|Du, Bin|Santi, Enrico
Idioma: Inglés
Editorial: Springer, Berlin|Springer International Publishing|Morgan & Claypool|Springer, 2013
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Librería: moluna, Greven, Alemaniamoluna
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Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first boo…k Modeling of Bipolar Power Semiconducto.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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EUR 29,95
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipol…ar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 88 pp. Englisch.
