9781493905508 - Design Exploration of Emerging Nano-scale Non-volatile Memory de Yu, Hao; Wang, Yuhao (18 resultados)

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hardcover. Condición: Sehr gut. 202 Seiten; 9781493905508.2 Gewicht in Gramm: 1.

Hardcover. Condición: Brand New. 2014 edition. 192 pages. 9.25x6.25x0.50 inches. In Stock.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.- Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices;- Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization;- Provides both theoretical analysis and practical examples to illustrate design methodologies;- Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Condición: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. ¿ Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; ¿ Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; ¿ Provides both theoretical analysis and practical examples to illustrate design methodologies; ¿ Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Condición: new. Questo è un articolo print on demand.

Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.- Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices;- Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization;- Provides both theoretical analysis and practical examples to illustrate design methodologies;- Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors. 204 pp. Englisch.

Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devicesFocuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system .

Condición: New. Print on Demand pp. x + 192 377 Illus.

Condición: New. PRINT ON DEMAND pp. x + 192.

Buch. Condición: Neu. Design Exploration of Emerging Nano-scale Non-volatile Memory | Hao Yu (u. a.) | Buch | x | Englisch | 2014 | Humana | EAN 9781493905508 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.

Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design.¿ Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices;¿ Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization;¿ Provides both theoretical analysis and practical examples to illustrate design methodologies;¿ Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 204 pp. Englisch.