Isbn: 9781138893351 - gallium nitride (gan): physics, devices, and technology (devices, circuits, and systems) (14 resultados)

Condición: As New. Unread book in perfect condition.

Condición: New.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: New.

Paperback / softback. Condición: New. New copy - Usually dispatched within 4 working days.

Condición: New.

Condición: New.

Kartoniert / Broschiert. Condición: New. Farid Medjdoub is a CNRS senior scientist at IEMN in France. He earned his Ph.D in electrical engineering from the University of Lille in 2004, and worked as a research associate at the University of Ulm in Germany before joining IMEC. M.

Taschenbuch. Condición: Neu. Gallium Nitride (GaN) | Physics, Devices, and Technology | Farid Medjdoub | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2017 | CRC Press | EAN 9781138893351 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Paperback. Condición: Brand New. 388 pages. 9.21x6.14x0.87 inches. In Stock.

Paperback. Condición: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Addresses a Growing Need for High-Power and High-Frequency TransistorsGallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.Explores Recent Progress in High-Frequency GaN TechnologyWritten by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.In addition, the authors:Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnectsExamine GaN technology while in its early stages of high-volume deployment in commercial and military productsConsider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technologyIntroduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layersA single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN. 388 pp. Englisch.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Addresses a Growing Need for High-Power and High-Frequency TransistorsGallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.Explores Recent Progress in High-Frequency GaN TechnologyWritten by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.In addition, the authors:Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnectsExamine GaN technology while in its early stages of high-volume deployment in commercial and military productsConsider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technologyIntroduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layersA single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.…