Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
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Librería: INDOO, Avenel, NJ, Estados Unidos de America
EUR 111,85
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
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Idioma: Inglés
Publicado por John Wiley & Sons Inc, Hoboken, 2019
ISBN 10: 1119523532 ISBN 13: 9781119523536
Librería: Grand Eagle Retail, Bensenville, IL, Estados Unidos de America
EUR 139,28
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Añadir al carritoHardcover. Condición: new. Hardcover. A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolutionmany cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFETExamines various approaches for analytical and compact modeling of JLFETs in circuit design and simulationExplains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETsSuggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 135,13
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Librería: Ubiquity Trade, Miami, FL, Estados Unidos de America
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Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Original o primera edición
EUR 153,64
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Añadir al carritoCondición: New. 2019. 1st Edition. Hardback. . . . . .
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
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Librería: moluna, Greven, Alemania
EUR 137,88
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Añadir al carritoCondición: New. SHUBHAM SAHAY, PHD, is a Post-Doctoral Research Scholar in the Department of Electrical and Computer Engineering, University of California, Santa Barbara. He has authored several peer-reviewed journal articles on topics including semiconductor device design.
Idioma: Inglés
Publicado por John Wiley & Sons Inc, Hoboken, 2019
ISBN 10: 1119523532 ISBN 13: 9781119523536
Librería: CitiRetail, Stevenage, Reino Unido
EUR 153,63
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: new. Hardcover. A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolutionmany cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFETExamines various approaches for analytical and compact modeling of JLFETs in circuit design and simulationExplains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETsSuggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Librería: Revaluation Books, Exeter, Reino Unido
EUR 184,24
Cantidad disponible: 2 disponibles
Añadir al carritoHardcover. Condición: Brand New. 478 pages. 9.25x6.25x1.00 inches. In Stock.
Librería: Kennys Bookstore, Olney, MD, Estados Unidos de America
EUR 192,43
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Añadir al carritoCondición: New. 2019. 1st Edition. Hardback. . . . . . Books ship from the US and Ireland.
Librería: Books Puddle, New York, NY, Estados Unidos de America
EUR 198,41
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Añadir al carritoCondición: New. pp. 448.
Librería: Majestic Books, Hounslow, Reino Unido
EUR 208,00
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Añadir al carritoCondición: New. pp. 448.
Idioma: Inglés
Publicado por John Wiley & Sons Inc, Hoboken, 2019
ISBN 10: 1119523532 ISBN 13: 9781119523536
Librería: AussieBookSeller, Truganina, VIC, Australia
EUR 224,82
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: new. Hardcover. A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolutionmany cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFETExamines various approaches for analytical and compact modeling of JLFETs in circuit design and simulationExplains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETsSuggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 191,27
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Añadir al carritoBuch. Condición: Neu. Neuware - A comprehensive one-volume reference on current JLFET methods, techniques, and researchAdvancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETsThis timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:\* Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET\* Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation\* Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs\* Suggests research directions and potential applications of JLFETsJunctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.