Isbn: 9780471856412 - speed devices: physics, technology, and circuit applications (18 resultados)

Condición: New.

Hardcover. Condición: New. Hardcover. New, unused. Free of any markings and no writings inside. For any additional information or pictures, please inquire.

Condición: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

HRD. Condición: New. New Book. Shipped from UK. Established seller since 2000.

Condición: New.

Condición: new.

Condición: As New. Unread book in perfect condition.

Condición: As New. Unread book in perfect condition.

Condición: New. pp. 12.

Condición: New. In English.

Condición: New. This study provides in-depth discussion of the physics and technology of GaAs material, devices and circuits, including some new device structures and applications not found elsewhere. Num Pages: 612 pages, black & white illustrations. BIC Classification: TGM; TJFC. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate; (XV) Technical / Manuals. Dimension: 267 x 188 x 38. Weight in Grams: 1272. . 1994. 1st. Hardcover. . . . . …

Condición: New. pp. 12 1st Edition.

Hardcover. Condición: new. Hardcover. The performance of high-speed semiconductor devicesthe genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronicsis inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possibleas well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides t Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Gebunden. Condición: New. This study provides in-depth discussion of the physics and technology of GaAs material, devices and circuits, including some new device structures and applications not found elsewhere.&Uumlber den AutorC. Y. CHANG is Professor and D.

Condición: New. This study provides in-depth discussion of the physics and technology of GaAs material, devices and circuits, including some new device structures and applications not found elsewhere. Num Pages: 612 pages, black & white illustrations. BIC Classification: TGM; TJFC. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate; (XV) Technical / Manuals. Dimension: 267 x 188 x 38. Weight in Grams: 1272. . 1994. 1st. Hardcover. . . . . Books ship from the US and Ireland. …

Buch. Condición: Neu. Neuware - The performance of high-speed semiconductor devices-the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics-is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication.…

Hardcover. Condición: Brand New. 12 pages. 10.50x7.50x1.50 inches. In Stock.

Hardcover. Condición: Brand New. 12 pages. 10.50x7.50x1.50 inches. In Stock. This item is printed on demand.