Isbn: 9780470511374 - esd: failure mechanisms and models (20 resultados)

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Condición: New.

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Condición: New. pp. xxiv + 384 Illus.

Condición: New. Provides a comprehensive analysis of ESD failure mechanisms over a wide range of semiconductor materials, devices, circuits and applications. Sets out methods for eliminating failure mechanisms through workable circuit solutions, including practical examples of failure defects. Num Pages: 408 pages, Illustrations. BIC Classification: TJFC. Category: (P) Professional & Vocational. Dimension: 252 x 176 x 27. Weight in Grams: 818. . 2009. 1st Edition. Hardcover. . . . .…

Condición: New.

Condición: New. pp. xxiv + 384 Index.

Condición: New. Provides a comprehensive analysis of ESD failure mechanisms over a wide range of semiconductor materials, devices, circuits and applications. Sets out methods for eliminating failure mechanisms through workable circuit solutions, including practical examples of failure defects. Num Pages: 408 pages, Illustrations. BIC Classification: TJFC. Category: (P) Professional & Vocational. Dimension: 252 x 176 x 27. Weight in Grams: 818. . 2009. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.…

Gebunden. Condición: New. Dr Steven H. Voldman received his B.S. in Engineering Science from the University of Buffalo (1979) M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T MS Engineering Physics (1986) and Ph.D EE (1991) from the University of Vermont under IBM s.

Condición: New. BRAND NEW. book.

Buch. Condición: Neu. Neuware - Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: - failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; - electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; - practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); - the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today's products. ESD: Failure Mechanisms and Models is a continuation of the author's series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era. …

Hardcover. Condición: new. Hardcover. Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems;electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis);the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in todays products. ESD: Failure Mechanisms and Models is a continuation of the authors series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era. Provides a comprehensive analysis of ESD failure mechanisms over a wide range of semiconductor materials, devices, circuits and applications. Sets out methods for eliminating failure mechanisms through workable circuit solutions, including practical examples of failure defects. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Hardcover. Condición: Brand New. 1st edition. 408 pages. 9.84x6.85x1.10 inches. In Stock. This item is printed on demand.

Condición: New. PRINT ON DEMAND pp. xxiv + 384.