Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
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Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
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Publicado por Cambridge University Press 2014-06-05, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
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Añadir al carritoPaperback. Condición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
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Publicado por Cambridge University Press CUP, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
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Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
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Idioma: Inglés
Publicado por Materials Research Society, 2002
ISBN 10: 1558996249 ISBN 13: 9781558996243
Librería: Zubal-Books, Since 1961, Cleveland, OH, Estados Unidos de America
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Añadir al carritoCondición: Very Good. 424 pp., hardcover, bound upside down, minor imperfections to binding, else fine. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: Basi6 International, Irving, TX, Estados Unidos de America
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Añadir al carritoCondición: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Librería: SpringBooks, Berlin, Alemania
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Idioma: Inglés
Publicado por Cambridge University Press, 2014
ISBN 10: 1107408539 ISBN 13: 9781107408531
Librería: AHA-BUCH GmbH, Einbeck, Alemania
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Añadir al carritoTaschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: California Books, Miami, FL, Estados Unidos de America
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Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: Ria Christie Collections, Uxbridge, Reino Unido
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Añadir al carritoCondición: Sehr gut. Zustand: Sehr gut | Seiten: 288 | Sprache: Englisch | Produktart: Bücher | This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers¿ understanding of future trends in non-volatile memories.
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Añadir al carritoCondición: New. pp. 273.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Original o primera edición
EUR 135,79
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Añadir al carritoCondición: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Auciello, Orlando; Hong, Seungbum (Samsung Advanced Institute of Technology, Suwon, Korea); Soss, Steven; Wouters, Dirk. Series: MRS Proceedings. Num Pages: 221 pages, illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 18. Weight in Grams: 432. . 2008. 1st Edition. hardcover. . . . .
Idioma: Inglés
Publicado por Materials Research Society, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: Books Puddle, New York, NY, Estados Unidos de America
EUR 164,51
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Añadir al carritoCondición: New. pp. xiii + 221.
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Añadir al carritoHardcover. Condición: Brand New. 2014 edition. 273 pages. 9.20x5.00x0.50 inches. In Stock.
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Añadir al carritoTaschenbuch. Condición: Neu. Emerging Non-Volatile Memories | Seungbum Hong (u. a.) | Taschenbuch | xii | Englisch | 2016 | Humana | EAN 9781489979308 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Librería: Revaluation Books, Exeter, Reino Unido
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Añadir al carritoHardcover. Condición: Brand New. 221 pages. 9.00x6.00x0.56 inches. In Stock.
Idioma: Inglés
Publicado por Springer US, Springer New York, 2014
ISBN 10: 1489975365 ISBN 13: 9781489975362
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 111,53
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Añadir al carritoBuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers' understanding of future trends in non-volatile memories.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: Kennys Bookstore, Olney, MD, Estados Unidos de America
EUR 170,74
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Añadir al carritoCondición: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Auciello, Orlando; Hong, Seungbum (Samsung Advanced Institute of Technology, Suwon, Korea); Soss, Steven; Wouters, Dirk. Series: MRS Proceedings. Num Pages: 221 pages, illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 18. Weight in Grams: 432. . 2008. 1st Edition. hardcover. . . . . Books ship from the US and Ireland.
EUR 114,36
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Añadir al carritoTaschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers' understanding of future trends in non-volatile memories.
EUR 180,44
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: Brand New. reprint edition. 285 pages. 9.25x6.10x0.68 inches. In Stock.
EUR 185,54
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Añadir al carritoHardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 1605110418 ISBN 13: 9781605110417
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 151,07
Cantidad disponible: 1 disponibles
Añadir al carritoBuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.
EUR 203,38
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.