Snowden christopher m (45 resultados)
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Librería: Rarewaves.com USA, London, LONDO, Reino UnidoRarewaves.com USA
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EUR 57,38
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Paperback. Condición: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Idioma: Inglés
Editorial: World Scientific Publishing Co Pte Ltd, Singapore, 1987
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Paperback. Condición: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect trans…istors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Paperback. Condición: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
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- Primera edición
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Hardcover. Condición: Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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Librería: Chiron Media, Wallingford, Reino UnidoChiron Media
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EUR 57,09
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PF. Condición: New.
Editorial: Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
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Librería: Antiquariaat Ovidius, Bredevoort, HolandaAntiquariaat Ovidius
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EUR 24,00
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Condición: Gebraucht / Used. 1986. Hardcover. xv,222pp.
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Semiconductor Device Modelling
Snowden, Christopher M.; Baets, Roel; Barker, John; Barnard, Joseph A.; Barton, Trevor M.; Clarke, Margaret E.; Cappy, Alain; Howes, Michael J.; Ingham, Derek; Miles, Robert E.; Mobbs, Stephen D.; Al-Mudares, Mustafa; Selberherr, Siegfried and Shur, Michael
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- Primera edición
Librería: Westland Books, Wymondham, Reino UnidoWestland Books
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EUR 59,77
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Good. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.
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Condición: New. pp. 300.
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EUR 76,18
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Paperback. Condición: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
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Paperback. Condición: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
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Taschenbuch. Condición: Neu. Compound Semiconductor Device Modelling | Christopher M. Snowden (u. a.) | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781447120506 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equiva…lent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
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Librería: Rarewaves.com UK, London, Reino UnidoRarewaves.com UK
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EUR 52,06
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Paperback. Condición: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFE…Ts), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Idioma: Inglés
Editorial: World Scientific Publishing Co Pte Ltd, Singapore, 1987
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Librería: AussieBookSeller, Truganina, VIC, AustraliaAussieBookSeller
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EUR 94,85
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Paperback. Condición: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect trans…istors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
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EUR 95,70
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Taschenbuch. Condición: Neu. Semiconductor Device Modelling | Christopher M. Snowden | Taschenbuch | viii | Englisch | 2011 | Springer | EAN 9781447112594 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Paperback. Condición: Brand New. 272 pages. 9.61x6.69x0.62 inches. In Stock.
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Condición: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transi…stors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very…high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
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paperback. Condición: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
