Kumar r saravana (58 resultados)

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Paperback. Condición: Brand New. 108 pages. 8.66x5.91x0.25 inches. In Stock.

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Taschenbuch. Condición: Neu. Performance Analysis of InP Based Hemt Devices in Nano Regime | Advanced device for sub millimeter wave applications | Saravana Kumar R. (u. a.) | Taschenbuch | 108 S. | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786200549983 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.…

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Hardcover. Condición: new. Hardcover. This volume contains select papers presented during the 4th National Conference on Multidisciplinary Analysis and Optimization. It discusses new developments at the core of optimization methods and their application in multiple applications. The papers showcase fundamental problems and applications which include domains such as aerospace, automotive and industrial sectors. The variety of topics and diversity of insights presented in the general field of optimization and its use in design for different applications will be of interest to researchers in academia or industry. This volume contains select papers presented during the 4th National Conference on Multidisciplinary Analysis and Optimization. The variety of topics and diversity of insights presented in the general field of optimization and its use in design for different applications will be of interest to researchers in academia or industry. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

Taschenbuch. Condición: Neu. Advances in Multidisciplinary Analysis and Optimization | Proceedings of the 4th National Conference on Multidisciplinary Analysis and Optimization | P. Pradeep Pratapa (u. a.) | Taschenbuch | Lecture Notes in Mechanical Engineering | xxvi | Englisch | 2023 | Springer | EAN 9789811939402 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.…

Condición: Hervorragend. Zustand: Hervorragend | Seiten: 496 | Sprache: Englisch | Produktart: Bücher | This volume contains select papers presented during the 4th National Conference on Multidisciplinary Analysis and Optimization. It discusses new developments at the core of optimization methods and their application in multiple applications. The papers showcase fundamental problems and applications which include domains such as aerospace, automotive and industrial sectors. The variety of topics and diversity of insights presented in the general field of optimization and its use in design for different applications will be of interest to researchers in academia or industry.…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains select papers presented during the 4thNational Conference on Multidisciplinary Analysis and Optimization. It discusses new developments at the core of optimization methods and their application in multiple applications. The papers showcase fundamental problems and applications which include domains such as aerospace, automotive and industrial sectors. The variety of topics and diversity of insights presented in the general field of optimization and its use in design for different applications will be of interest to researchers in academia or industry.…

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains select papers presented during the 4thNational Conference on Multidisciplinary Analysis and Optimization. It discusses new developments at the core of optimization methods and their application in multiple applications. The papers showcase fundamental problems and applications which include domains such as aerospace, automotive and industrial sectors. The variety of topics and diversity of insights presented in the general field of optimization and its use in design for different applications will be of interest to researchers in academia or industry.…

Condición: New. pp. 496.

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Hardcover. Condición: Brand New. 493 pages. 9.25x6.10x1.18 inches. In Stock.

Hardcover. Condición: gut. 2022. Advances in Multidisciplinary Analysis and Optimization In deutscher Sprache. pages.

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PAP. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances. 108 pp. Englisch.…

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: R. Saravana KumarDr. R. Saravana Kumar was born in Tamilnadu, India. He received the B.E degree in Electronics and Communication Engineering and M.E degree in Applied Electronics. He received the Ph.D degree in Information and Commun.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book is focused on enhancing the endurance of Non-Volatile Random Access Memory (NVRAM) for embedded systems applications. It describes the methodology that combines optimized machine learning algorithms based on workload prediction and data compression techniques to prolong the lifespan of NVRAM. The framework utilizes an Instruction Per Cycle-based Dynamic Pattern Compression model to analyze and compress workloads, as well as a Workload Hybrid Energy Adaptive Learning model to categorize and further compress data for storage. The book provides a solution for improving NVRAM endurance, which is crucial for the performance of embedded devices, by addressing workload prediction and efficient compression.…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 108 pp. Englisch.…

Condición: new. Questo è un articolo print on demand.