Gutmann ronald j (50 resultados)

Hardcover. Condición: Sehr gut. 243 S.; Ill. Very good. Shrink wrapped. Sprache: Englisch Gewicht in Gramm: 685.

paperback. Condición: New. In shrink wrap. Looks like an interesting title.

Condición: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condición: New. Leading experts address questions of public and private roles in assessing, managing, and mitigating major risks to public health and safety in light of the devastation caused by Hurricane Katrina.&Uumlber den AutorRonald J. Daniels.

Condición: Good. : Este libro es una guía completa sobre el estado del arte y la dirección futura de la tecnología de interconexión de cobre. Debido a sus ventajas de rendimiento, la metalización de cobre para la interconexión de circuitos integrados está atrayendo un gran interés en la comunidad de semiconductores en todo el mundo. Los autores se basan en más de una década de participación en la investigación de interconexión de cobre, integrando grandes cantidades de conocimiento disponible y aclarando la conexión entre los principios mecanicistas y las tecnologías relevantes. Cuenta con amplias referencias, tablas y más de 100 ilustraciones, incluyendo el patrón de doble Damasceno necesario para las interconexiones de cobre. EAN: 9780471252566 Tipo: Libros Categoría: Tecnología|Ciencias Título: Copper-Fundamental Mechanisms for Microelectronic Applications Autor: Shyam P. Murarka| Igor V. Verner| Ronald J. Gutmann Editorial: Wiley-Interscience Idioma: en Páginas: 384 Formato: tapa dura.…

Condición: good. A copy that has been read, remains in good condition. All pages are intact, and the cover is intact. The spine and cover show signs of wear. Pages can include notes and highlighting and show signs of wear, and the copy can include "From the library of" labels or previous owner inscriptions. 100% GUARANTEE! Shipped with delivery confirmation, if you're not satisfied with purchase please return item! Ships via media mail.…

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Condición: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condición: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condición: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Hardcover. Condición: Acceptable. Connecting readers with great books since 1972. Used textbooks may not include companion materials such as access codes, etc. May have condition issues including wear and notes/highlighting. We ship orders daily and Customer Service is our top priority.

Hardcover. Condición: Fair. No Jacket. Missing dust jacket; Readable copy. Pages may have considerable notes/highlighting. ~ ThriftBooks: Read More, Spend Less.

Condición: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Condición: New.

Condición: New.

Condición: New.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: As New. Unread book in perfect condition.

Condición: New. In English.

Condición: New. In English.

Condición: New. In English.

Condición: New. In English.

Taschenbuch. Condición: Neu. Wafer Level 3-D ICS Process Technology | Chuan Seng Tan (u. a.) | Taschenbuch | xii | Englisch | 2010 | Springer Us | EAN 9781441945624 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Condición: New. Merges the complex chemical-mechanical planarization (CMP) models and mechanisms that have evolved over the years with experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. This book looks into the fundamental reaction kinetics. Num Pages: 229 pages, biography. BIC Classification: TDCP. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 15. Weight in Grams: 532. . 2002. Hardback. . . . .…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Three-dimensional (3D) integration is clearly the simplest answer to most of the semiconductor industry's vexing problems: heterogeneous integration and red- tions of power, form factor, delay, and even cost. Conceptually the power, latency, and form factor of a system with a xed number of transistors all scale roughly linearly with the diameter of the smallest sphere enclosing frequently interacting devices. This clearly provides the fundamental motivation behind 3D technologies which vertically stack several strata of device and interconnect layers with high vertical interconnectivity. In addition, the ability to vertically stack strata with - vergent and even incompatible process ows provides for low cost and low parasitic integration of diverse technologies such as sensors, energy scavengers, nonvolatile memory, dense memory, fast memory, processors, and RF layers. These capabilities coupled with today's trends of increasing levels of integrated functionality, lower power, smaller form factor, increasingly divergent process ows, and functional diversi cation would seem to make 3D technologies a natural choice for most of the semiconductor industry. Since the concept of vertical integration of different strata has been around for over 20 years, why aren't vertically stacked strata endemic to the semiconductor industry The simple answer to this question is that in the past, the 3D advantages while interesting were not necessary due to the tremendous opportunities offered by geometric scaling. In addition, even when the global interconnect problem of high-performance single-core processors seemed insurmountable without inno- tions such as 3D, alternative architectural solutions such as multicores could eff- tivelydelaybutnoteliminatetheneedfor3D.…

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Three-dimensional (3D) integration is clearly the simplest answer to most of the semiconductor industry's vexing problems: heterogeneous integration and red- tions of power, form factor, delay, and even cost. Conceptually the power, latency, and form factor of a system with a xed number of transistors all scale roughly linearly with the diameter of the smallest sphere enclosing frequently interacting devices. This clearly provides the fundamental motivation behind 3D technologies which vertically stack several strata of device and interconnect layers with high vertical interconnectivity. In addition, the ability to vertically stack strata with - vergent and even incompatible process ows provides for low cost and low parasitic integration of diverse technologies such as sensors, energy scavengers, nonvolatile memory, dense memory, fast memory, processors, and RF layers. These capabilities coupled with today's trends of increasing levels of integrated functionality, lower power, smaller form factor, increasingly divergent process ows, and functional diversi cation would seem to make 3D technologies a natural choice for most of the semiconductor industry. Since the concept of vertical integration of different strata has been around for over 20 years, why aren't vertically stacked strata endemic to the semiconductor industry The simple answer to this question is that in the past, the 3D advantages while interesting were not necessary due to the tremendous opportunities offered by geometric scaling. In addition, even when the global interconnect problem of high-performance single-core processors seemed insurmountable without inno- tions such as 3D, alternative architectural solutions such as multicores could eff- tivelydelaybutnoteliminatetheneedfor3D. …

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.…

Condición: New. pp. 248.

Condición: New. pp. 376.