Gusev alexander (68 resultados)

Hardcover. Condición: Good. Good w/ Protective Cover. Some light rubbing and edgewear, DJ has minor tearing and chipping. Text has minor spotting on a few pages and is beginning to loosen in binding. Due to size, this book will require additional shipping outside the U.S. Size: Folio - over 12" - 15" tall. …

Hardcover. Condición: Near Fine. Estado de la sobrecubierta: Near Fine. First Edition. 247pp. Red cloth, gilt lettering to spine. Book and dust jacket are in clean, unworn condition, small US importer's label on front pastetdown. An elaborately designed volume featuring photography of numerous Bolshoi productions spanning several decades. A handsome and well-preserved book. This book has 2 identical dust jackets, one on top of the other, both in near fine condition.…

Hardcover. Condición: Very Good. Estado de la sobrecubierta: Very Good. 1st Edition. dust jacket shows edge-wear bumping, minor rip o top corner front, clean condition, 248pp, pages nice and clean and VG+ condition.

Hardcover. Condición: Very Good. Estado de la sobrecubierta: Very Good. The dust jacket has a little wear. The page edges are a bit foxed. No page numbers. Books listed here are not stored at the shop. Please contact us if you want to pick up a book from Newtown.

Condición: New.

Condición: New. 1st ed. 2024 edition NO-PA16APR2015-KAP.

Condición: New. pp. 104.

Condición: New.

Hardcover. Condición: Very Good. AS NEW: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices HC 1998 Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47) 1998th Edition by Eric Garfunkel (Editor), Evgeni Gusev (Editor), Alexander Vul' (Editor) OUR REFERENCE:128B3-0792350073-HC-2P2-lb-Wht-B45 DESCRIPTION An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Product details Publisher &#8207; : &#8206; Springer; 1998th edition (March 31, 1998) Language &#8207; : &#8206; English Hardcover &#8207; : &#8206; 518 pages ISBN-10 &#8207; : &#8206; 0792350073 ISBN-13 &#8207; : &#8206; 978-0792350071.…

Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condición: New.

Condición: New.

Condición: As New. Unread book in perfect condition.

Condición: New.

Condición: New. In English.

Condición: New. In English.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.…

Condición: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 170 x 28. Weight in Grams: 962. . 1998. Hardback. . . . .…

Condición: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 26. Weight in Grams: 1590. . 1998. Softcover reprint of the original 1st ed. 1998. Paperback. . . . .…

Condición: New. pp. 524.

Condición: As New. Unread book in perfect condition.

Condición: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 170 x 28. Weight in Grams: 962. . 1998. Hardback. . . . . Books ship from the US and Ireland.…

Condición: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 26. Weight in Grams: 1590. . 1998. Softcover reprint of the original 1st ed. 1998. Paperback. . . . . Books ship from the US and Ireland.…

Hardcover. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condición: As New. Unread book in perfect condition.

Condición: Good. 4to. [Ca. 30 pp.] Softcovers. Very Good. Color Plates.

Hardcover. Condición: Good. Ser. (Workshop). Volume 2. Moscow. Meaning 1997. Contact us for details or to request photos of available books. Delivery of this book could take longer than normal due to additional handling time before shipping, and no rush delivery options are available. Please let us know if you have a specific date by which you need to receive your order. SKUalba093fb5f41275c9e.…

Hardcover. Condición: Good. Kazan KSU 1990. Contact us for details or to request photos of available books. Delivery of this book could take longer than normal due to additional handling time before shipping, and no rush delivery options are available. Please let us know if you have a specific date by which you need to receive your order.SKUalb8f9658147826cab4.…

Hardcover. Condición: Good. Moscow. The Young Guard 1970. Contact us for details or to request photos of available books. Delivery of this book could take longer than normal due to additional handling time before shipping, and no rush delivery options are available. Please let us know if you have a specific date by which you need to receive your order.SKUalb91f5196028e55878.…