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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47)
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Hardcover. Condición: Very Good. AS NEW: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices HC 1998 Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47) 1998th Edition by Eric Garfunkel (Editor), Evgeni Gusev (Editor), Alexander Vul' (Editor) OUR REFERENCE:128B3-0792350073-HC-2P2-lb-Wht-B45 DESCRIPTION An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Product details Publisher ‏ : ‎ Springer; 1998th edition (March 31, 1998) Language ‏ : ‎ English Hardcover ‏ : ‎ 518 pages ISBN-10 ‏ : ‎ 0792350073 ISBN-13 ‏ : ‎ 978-0792350071. Nº de ref. del artículo: 128B3-0792350073-HC-2P2-lb-Wht-B45
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47)
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47)
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Gebunden. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 An extrapolation of ULSI scaling trends indicates . Nº de ref. del artículo: 5968425
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Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices
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Condición: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 170 x 28. Weight in Grams: 962. . 1998. Hardback. . . . . Nº de ref. del artículo: V9780792350071
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Buch. Condición: Neu. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices | Eric Garfunkel (u. a.) | Buch | xi | Englisch | 1998 | Springer Netherland | EAN 9780792350071 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. Nº de ref. del artículo: 102550497
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses ofSpringer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 524 pp. Englisch. Nº de ref. del artículo: 9780792350071
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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Condición: New. Print on Demand pp. 524 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam. Nº de ref. del artículo: 7974650
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Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
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ISBN 13: 9780792350071
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Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Nº de ref. del artículo: 9780792350071
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