Carlo jacoboni (85 resultados)

Pamphlet. Condición: Very Good. Vol 40, No 2, pp. 454-460, 4to, Extracted from orig vol, thus begins with title page, stapled & trimmed pamphlet, else VG.

Hardcover. Condición: Good. No Jacket. Condition : Good. Ex-university library with associated markings. Hard cover, no jacket. 292pp. No highlighting or annotations to text. Photo on request.

brossura. Condición: ottimo. in 8 pp. 440.

Wrappers. Condición: Near Fine. 583- 854pp. Scientific journal with 6 articles. Includes the paper Statistical mechanics of cellular automata by Stephen Wolfram (of Wolfram Alpha fame) as well as Kenneth G. Wilson's 1982 Nobel Prize in Physics address, "The renormalization group and critical phenomena".…

Paperback. Condición: New.

Hardcover. Condición: Gut. 590 S. Ehem. Bibliotheksexemplar mit Bib.-Signatur und Stempel in GUTEM Zustand. Kaum Gebrauchsspuren. 030643881X Sprache: Englisch Gewicht in Gramm: 550.

Hardcover. Condición: Very Good. 1989. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

hardcover. Condición: Good. Connecting readers with great books since 1972! Used textbooks may not include companion materials such as access codes, etc. May have some wear or writing/highlighting. We ship orders daily and Customer Service is our top priority.

Condición: New. In English.

Condición: New. In English.

Condición: New. In English.

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.…

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors.…

Condición: New. pp. 372.

Condición: New. pp. 316.

Condición: New. pp. 376.

Condición: New.

Paperback. Condición: Brand New. 372 pages. 9.25x6.10x0.84 inches. In Stock.

Condición: New. In English.

Condición: New. In English.

Condición: New.

Condición: New. In English.

Condición: New. In English.

Condición: New.

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices. …

Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a 'best' device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.…

Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.…

Gebunden. Condición: New. Proceedings of a NATO ASI held in Il Ciocco, Italy, July 17-30, 1994 The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) an.

Condición: New. pp. 608.

Condición: New. pp. 556 Index.