Cappelletti paulo (20 resultados)
Idioma: Inglés
Editorial: Kluwer Academic Publishers, Norwell, Massachusetts, U.S.A. 1999
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Librería: PsychoBabel & Skoob Books, Didcot, Reino UnidoPsychoBabel & Skoob Books
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hardcover. Condición: Very Good. No Dust Jacket. First Edition. Hardcover with white lettering on spine and upper board and contents in almost new condition, showing minimal signs of wear. Previous owner's name on FEP. No dust jacket. T. Used.
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Librería: GoldBooks, Denver, CO, Estados Unidos de AmericaGoldBooks
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Hardcover. Condición: new. New Copy. Customer Service Guaranteed.
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Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK
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Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections
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Librería: moluna, Greven, , Alemaniamoluna
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Gebunden. Condición: New.
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Librería: GreatBookPrices, Columbia, MD, Estados Unidos de AmericaGreatBookPrices
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Condición: As New. Unread book in perfect condition.
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Librería: preigu, Osnabrück, Alemaniapreigu
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Taschenbuch. Condición: Neu. Flash Memories | Paulo Cappelletti (u. a.) | Taschenbuch | xi | Englisch | 2014 | Springer US | EAN 9781461372783 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Librería: GreatBookPricesUK, Woodford Green, Reino UnidoGreatBookPricesUK
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Condición: As New. Unread book in perfect condition.
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electron…s were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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Buch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were…injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Flash Memories
Cappelletti, Paulo (Editor) / Golla, Carla (Editor) / Olivo, Piero (Editor) / Zanoni, Enrico (Editor)
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Librería: Revaluation Books, Exeter, , Reino UnidoRevaluation Books
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Paperback. Condición: Brand New. 551 pages. 9.30x6.20x1.20 inches. In Stock.
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Librería: YESIBOOKSTORE, MIAMI, FL, Estados Unidos de AmericaYESIBOOKSTORE
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hardcover. Condición: As New. This item is printed on demand.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, , AlemaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 320,99
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Buch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot… electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. 556 pp. Englisch.
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Librería: preigu, Osnabrück, Alemaniapreigu
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Buch. Condición: Neu. Flash Memories | Paulo Cappelletti (u. a.) | Buch | xi | Englisch | 1999 | Springer US | EAN 9780792384878 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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EUR 320,99
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Buch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot ele…ctrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 556 pp. Englisch.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
Contactar con el vendedorVendedor de 5 estrellasCondición: Nuevo
EUR 320,99
Envío por EUR 60,00Se envía de Alemania a Estados Unidos de AmericaCantidad disponible: 1 disponibles
Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which…hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 556 pp. Englisch.
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, , AlemaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 416,23
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A Flash memory is a Non Volatile Memory (NVM) whose 'unit cells' are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in wh…ich hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the 'unit cell' of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. 556 pp. Englisch.
