Librería: Feldman's Books, Menlo Park, CA, Estados Unidos de America
Original o primera edición
EUR 70,92
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: Very Fine. First Edition. No markings.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: Optimon Books, Gravesend, KENT, Reino Unido
EUR 73,82
Cantidad disponible: 1 disponibles
Añadir al carritoHardcover. Condición: Good. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. Previous owner's name to ffep, otherwise very good.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Optimon Books, Gravesend, KENT, Reino Unido
EUR 84,54
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: Fair. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
EUR 109,24
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: California Books, Miami, FL, Estados Unidos de America
EUR 111,71
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
EUR 111,28
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: As New. Unread book in perfect condition.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Ria Christie Collections, Uxbridge, Reino Unido
EUR 102,41
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. In.
Idioma: Inglés
Publicado por Cambridge University Press 2011-06-30, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Chiron Media, Wallingford, Reino Unido
EUR 100,66
Cantidad disponible: 10 disponibles
Añadir al carritoPaperback. Condición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 102,40
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Original o primera edición
EUR 117,29
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . .
Idioma: Inglés
Publicado por Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Rarewaves.com USA, London, LONDO, Reino Unido
EUR 130,94
Cantidad disponible: Más de 20 disponibles
Añadir al carritoPaperback. Condición: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 115,32
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: As New. Unread book in perfect condition.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: BennettBooksLtd, Los Angeles, CA, Estados Unidos de America
EUR 128,31
Cantidad disponible: 1 disponibles
Añadir al carritohardcover. Condición: New. In shrink wrap. Looks like an interesting title!
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
EUR 135,07
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Librería: GreatBookPrices, Columbia, MD, Estados Unidos de America
EUR 136,83
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: As New. Unread book in perfect condition.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 124,18
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press CUP, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Books Puddle, New York, NY, Estados Unidos de America
EUR 145,58
Cantidad disponible: 4 disponibles
Añadir al carritoCondición: New. pp. 380 Index.
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Librería: GreatBookPricesUK, Woodford Green, Reino Unido
EUR 135,64
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: As New. Unread book in perfect condition.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Kennys Bookstore, Olney, MD, Estados Unidos de America
EUR 144,74
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . . Books ship from the US and Ireland.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: California Books, Miami, FL, Estados Unidos de America
EUR 164,90
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: Ria Christie Collections, Uxbridge, Reino Unido
EUR 152,02
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. In.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
EUR 174,41
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . .
Idioma: Inglés
Publicado por Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Librería: Revaluation Books, Exeter, Reino Unido
EUR 183,14
Cantidad disponible: 2 disponibles
Añadir al carritoHardcover. Condición: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock.
Idioma: Inglés
Publicado por Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Rarewaves.com UK, London, Reino Unido
EUR 123,64
Cantidad disponible: Más de 20 disponibles
Añadir al carritoPaperback. Condición: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 137,04
Cantidad disponible: 1 disponibles
Añadir al carritoTaschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: Kennys Bookstore, Olney, MD, Estados Unidos de America
EUR 218,05
Cantidad disponible: Más de 20 disponibles
Añadir al carritoCondición: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . . Books ship from the US and Ireland.
Librería: Revaluation Books, Exeter, Reino Unido
EUR 221,00
Cantidad disponible: 2 disponibles
Añadir al carritoHardcover. Condición: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
Idioma: Inglés
Publicado por Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Librería: AHA-BUCH GmbH, Einbeck, Alemania
EUR 198,73
Cantidad disponible: 1 disponibles
Añadir al carritoBuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
Idioma: Inglés
Publicado por Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Grand Eagle Retail, Bensenville, IL, Estados Unidos de America
EUR 111,57
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Idioma: Inglés
Publicado por Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Librería: Revaluation Books, Exeter, Reino Unido
EUR 97,75
Cantidad disponible: 1 disponibles
Añadir al carritoPaperback. Condición: Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand.