Modeling and Characterization of RF and Microwave Power FETs Hardback (The Cambridge RF and Microwave Engineering Series) - Tapa dura

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Aaen ; Pl�; Wood

9780521870665: Modeling and Characterization of RF and Microwave Power FETs Hardback (The Cambridge RF and Microwave Engineering Series)

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ISBN 10: 0521870666 ISBN 13: 9780521870665

Editorial: Cambridge University Press, 2007

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This 2007 book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.

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Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. Jaime A. Pia is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.

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Editorial: Cambridge University Press
A�o de publicaci�n: 2007
Idioma: Ingl�s
ISBN 10: 0521870666
ISBN 13: 9780521870665
Encuadernaci�n: Tapa dura
N�mero de p�ginas: 388
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Modeling and Characterization of RF and Microwave Power FETs

Aaen, Peter H; Pla, Jaime A. And Wood, John

Publicado por Cambridge, Cambridge, 2007

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Hardcover. Condici�n: Very Fine. First Edition. No markings. N� de ref. del art�culo: 00044259

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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

Aaen, Peter; Pl�, Jaime A.; Wood, John

Publicado por Cambridge University Press, 2007

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

Aaen, Peter; Pl�, Jaime A.; Wood, John

Publicado por Cambridge University Press, 2007

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

Aaen, Peter

Publicado por Cambridge University Press, 2007

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Condici�n: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . . N� de ref. del art�culo: V9780521870665

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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

Aaen, Peter; Pl�, Jaime A.; Wood, John

Publicado por Cambridge University Press, 2007

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Condici�n: New. In English. N� de ref. del art�culo: ria9780521870665_new

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Modeling and Characterization of RF and Microwave Power FETs

Aaen, Peter|Pl�, Jaime A.|Wood, John

Publicado por Cambridge University Press, 2015

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Gebunden. Condici�n: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.&Uumlber . N� de ref. del art�culo: 446951506

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Modeling and Characterization of RF and Microwave Power FETs (Hardcover)

Peter Aaen

Publicado por Cambridge University Press, Cambridge, 2007

ISBN 10: 0521870666 ISBN 13: 9780521870665

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Hardcover. Condici�n: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N� de ref. del art�culo: 9780521870665

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