Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, April 1 to June 30, 1972 (Classic Reprint) - Tapa dura

Sinopsis

Excerpt from Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, April 1 to June 30, 1972

This quarterly progress report, sixteenth of a series, describes nbs activities directed toward the development of methods of measure ment for semiconductor materials, process control, and devices. Sig nificant accomplishments during this reporting period include verifi cation of the applicability of resolution of forces in interpreting pull test measurements on unannealed wire bonds on single-level sub strates, completion of the feasibility study of ribbon-wire bonding with the important finding that ribbon-wire bonds can be made with a wider range of bonding parameters than rounddwire bonds of the same strength, and development of test procedures~in preparation for stud ies of high-frequency measurements of transistors on the wafer by means of probes. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die at tachment; and measurement of thermal properties of semiconductor de vices, delay time and-related carrier transport properties in junction devices, and noise properties of microwave diodes. New work has been started on development of procedures for analysis of the characteris tics of generation - recombination-trapping centers in silicon. Supple mentary data concerning staff, standards committee activities, techni cal services, and publications are included as appendixes.

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