Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, July 1 to September 30, 1972 (Classic Reprint) - Tapa dura

Sinopsis

Excerpt from Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, July 1 to September 30, 1972

Key wards: Aluminum wire; base transit time; carrier lifetime; die attach ment; electrical properties; epitaxial silicon; gamma - ray detectors; gen eration centers; germanium; gold-doped silicon; infrared response; methods of measurement; microelectronics; microwave diodes; nuclear radiation de tectors; probe techniques (aéc); recombination centers; resistivity; ribbon wire bonding; semiconductor devices; semiconductor materials; semiconductor process control; silicon; thermal resistance; trapping centers; ultrasonic bonding; wire bonds.

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