ISBN: 9789812568649 - physics and modeling of mosfets, the: surface-potential model hisim: 0 (international series on advances in solid state electronics and technology) (5 resultados)

hardcover. Condición: Hardcover. Hardcover. unused. Free of any markings and no writings inside. Minor shelf-wear.

Condición: Gut. Zustand: Gut | Seiten: 380 | Sprache: Englisch | Produktart: Bücher | This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.…

Hardcover. Condición: Brand New. illustrated edition. 350 pages. 9.25x6.50x1.00 inches. In Stock.

Condición: New. Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one.

Buch. Condición: Neu. Neuware - This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.…