Isbn: 9786208011901 - charge plasma induced double gate tfet as biosensor: advanced tfet design for low-power electronics and biosensing via gate engineering and dielectric modulation (10 resultados)

PAP. Condición: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Condición: New. New Book. Shipped from UK. Established seller since 2000.

Condición: New.

Taschenbuch. Condición: Neu. Charge Plasma Induced Double Gate TFET as Biosensor | Advanced TFET Design for Low-Power Electronics and Biosensing via Gate Engineering and Dielectric Modulation | Dipshika Das (u. a.) | Taschenbuch | Englisch | 2025 | LAP LAMBERT Academic Publishing | EAN 9786208011901 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 172 pp. Englisch.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book presents a groundbreaking Dual Metal Double Gate Tunnel Field Effect Transistor (DM DG TFET) featuring a laterally divided dielectric gate oxide structure with a tunneling and auxiliary gate. By engineering gate oxides and work functions, the device achieves a sub-threshold swing below 90 mV/decade, high current ratio, and ultra-low OFF current. It explores the role of high-k dielectrics, doping, and gate potentials in optimizing performance. The research further introduces a charge plasma-based TFET for label-free biomolecule detection, demonstrating exceptional drain sensitivity and RF response. A Heterojunction Ferroelectric Charge Plasma TFET design enhances switching speed and biosensing accuracy. Bridging innovation with simulation, this work establishes TFETs as key components for next-generation electronics and biosensing technologies.…

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book presents a groundbreaking Dual Metal Double Gate Tunnel Field Effect Transistor (DM DG TFET) featuring a laterally divided dielectric gate oxide structure with a tunneling and auxiliary gate. By engineering gate oxides and work functions, the device achieves a sub-threshold swing below 90 mV/decade, high current ratio, and ultra-low OFF current. It explores the role of high-k dielectrics, doping, and gate potentials in optimizing performance. The research further introduces a charge plasma-based TFET for label-free biomolecule detection, demonstrating exceptional drain sensitivity and RF response. A Heterojunction Ferroelectric Charge Plasma TFET design enhances switching speed and biosensing accuracy. Bridging innovation with simulation, this work establishes TFETs as key components for next-generation electronics and biosensing technologies.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 172 pp. Englisch.…

Condición: New. Print on Demand.

Condición: New. Print on Demand.

Condición: New. PRINT ON DEMAND.