9786202672030 - dielectric and work function engineered doping-less tunnel fet: subthreshold modeling, simulation and analysis de lakshmi priya, g.; balamurugan, n. b. (8 resultados)
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Librería: moluna, Greven, Alemaniamoluna
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and su…bthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator. 200 pp. Englisch.
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Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books
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Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios
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Librería: preigu, Osnabrück, Alemaniapreigu
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Taschenbuch. Condición: Neu. Dielectric and Work Function Engineered Doping-Less Tunnel FET | Subthreshold Modeling, Simulation and Analysis | G. Lakshmi Priya (u. a.) | Taschenbuch | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786202672030 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivib…as Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu Print on Demand.
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthr…eshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 200 pp. Englisch.
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthre…shold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.
