9783846522097 - Subthreshold Modeling of Submicron MOSFETs: Short Channel Mosfets: Conventional and Dual Material Gate (DMG) de Sarkar, Angsuman (5 resultados)

Taschenbuch. Condición: Neu. Subthreshold Modeling of Submicron MOSFETs | Short Channel Mosfets: Conventional and Dual Material Gate (DMG) | Angsuman Sarkar | Taschenbuch | 104 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783846522097 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high accuracy. This book is designed to serve as a reference book for subthreshold surface-potential based short channel MOSFET device modeling using TCAD tools. 104 pp. Englisch.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sarkar AngsumanAngsuman Sarkar received his M.Tech degree in VLSI & Microelectronics from Jadavpur University. His research interest span around nano device modeling. He is a life member of ISTE,IE(India)and member of IEEE-Electron D.

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high accuracy. This book is designed to serve as a reference book for subthreshold surface-potential based short channel MOSFET device modeling using TCAD tools.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 104 pp. Englisch.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high accuracy. This book is designed to serve as a reference book for subthreshold surface-potential based short channel MOSFET device modeling using TCAD tools.