Subthreshold Modeling of Submicron MOSFETs: Short Channel Mosfets: Conventional and Dual Material Gate (DMG) - Tapa blanda

Sarkar, Angsuman

 
9783846522097: Subthreshold Modeling of Submicron MOSFETs: Short Channel Mosfets: Conventional and Dual Material Gate (DMG)
Tapa blanda
ISBN 10: 3846522090 ISBN 13: 9783846522097
Editorial: LAP LAMBERT Academic Publishing, 2011

Sinopsis

Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high accuracy. This book is designed to serve as a reference book for subthreshold surface-potential based short channel MOSFET device modeling using TCAD tools.

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Reseña del editor

Nanotechnology deals with the creation and utilization of materials, devices and systems on the nanometer-length scale. Higher speed can be achieved with a smaller device size. This rapid rate of feature size downscaling would lead to a significant short channel effects limitations. DMG MOSFET has been proposed as potential candidate to combat SCEs. Moreover, the design of both digital and analog systems in which the devices are operated in the subthreshold regime has evinced a lot of interest due to the tremendous market demand for extremely low power applications It is highly important to understand the device physics and development of corresponding accurate device model of subthreshold performances for application of MOSFET in the integrated circuit simulation and design in parallel to the process technology advancement. At present, there is a general consensus that the surface potential based modeling approach preserves device physics to describe the device operation with high accuracy. This book is designed to serve as a reference book for subthreshold surface-potential based short channel MOSFET device modeling using TCAD tools.

Biografía del autor

Angsuman Sarkar received his M.Tech degree in VLSI & Microelectronics from Jadavpur University. His research interest span around nano device modeling. He is a life member of ISTE,IE(India)and member of IEEE-Electron Device Society. He has authored many books and number of research papers in national and international journals and conferences.

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Editorial
LAP LAMBERT Academic Publishing
Año de publicación
2011
Idioma
Inglés
ISBN 10 
3846522090
ISBN 13 
9783846522097
Encuadernación
Tapa blanda
Número de páginas
104
Contacto del fabricante
no disponible
Persona responsable
no disponible