ISBN: 9783838336428 - esd protection challenges: finfet technology and rf cmos circuits (5 resultados)

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  • Idioma: Inglés

    Editorial: LAP Lambert Academic Publishing, 2010

    3838336429 / 9783838336428

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    Librería: Mispah books, Redhill, SURRE, Reino UnidoMispah books

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    Condición: Usado - Como Nuevo

    EUR 205,14

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    Cantidad disponible: 1 disponible

    Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

  • Idioma: Inglés

    Editorial: LAP LAMBERT Academic Publishing Feb 2010, 2010

    3838336429 / 9783838336428

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    Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.

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    EUR 79,00

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    Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Two main Electro Static Discharge (ESD) challenges lie ahead. Firstly, FinFET technology has only a limited available silicon volume to dissipate the ESD current. Secondly, as CMOS technology downscaling allows Radio Frequency (RF) applications to operate at higher RF frequencies and wider bandwidths, adequate ESD protection needs to be developed without compromising RF performance. This book, therefore, provides an in-depth analysis on ESD protection structures and concepts, implemented in silicon on insulator FinFET technology. Complex dependencies are found for the different ESD performance parameters on both device geometry and process technology. Further, in this book, novel RF-ESD protection solutions are proposed for both narrow- and wideband RF CMOS circuits in most advanced CMOS technologies, with a special emphasis towards CDM protection. This analysis should provide fundamental understanding of the ESD challenges for FinFET technology and RF CMOS circuits, and should be especially useful to everyone working with ESD in the field of product development, support, research or education. 272 pp. Englisch.…

  • Idioma: Inglés

    Editorial: LAP LAMBERT Academic Publishing, 2010

    3838336429 / 9783838336428

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    Librería: moluna, Greven, Alemaniamoluna

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    EUR 63,42

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    Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Thijs StevenSteven Thijs, PhD: Studied Civil Electrotechnical Engineering at Katholieke Universiteit Leuven. Senior Researcher at imec, Leuven, Belgium. Guido Groeseneken, PhD: Fellow at imec, Leuven, Belgium. Also professor at Kat. …

  • Idioma: Inglés

    Editorial: LAP LAMBERT Academic Publishing, 2010

    3838336429 / 9783838336428

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    Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH

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    EUR 86,42

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    Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Two main Electro Static Discharge (ESD) challenges lie ahead. Firstly, FinFET technology has only a limited available silicon volume to dissipate the ESD current. Secondly, as CMOS technology downscaling allows Radio Frequency (RF) applications to operate at higher RF frequencies and wider bandwidths, adequate ESD protection needs to be developed without compromising RF performance. This book, therefore, provides an in-depth analysis on ESD protection structures and concepts, implemented in silicon on insulator FinFET technology. Complex dependencies are found for the different ESD performance parameters on both device geometry and process technology. Further, in this book, novel RF-ESD protection solutions are proposed for both narrow- and wideband RF CMOS circuits in most advanced CMOS technologies, with a special emphasis towards CDM protection. This analysis should provide fundamental understanding of the ESD challenges for FinFET technology and RF CMOS circuits, and should be especially useful to everyone working with ESD in the field of product development, support, research or education.…

  • Idioma: Inglés

    Editorial: LAP LAMBERT Academic Publishing Feb 2010, 2010

    3838336429 / 9783838336428

    • Tapa blanda
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    Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000

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    Condición: Nuevo

    EUR 79,00

    Envío por EUR 60,00 
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    Cantidad disponible: 1 disponible

    Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Two main Electro Static Discharge (ESD) challenges lie ahead. Firstly, FinFET technology has only a limited available silicon volume to dissipate the ESD current. Secondly, as CMOS technology downscaling allows Radio Frequency (RF) applications to operate at higher RF frequencies and wider bandwidths, adequate ESD protection needs to be developed without compromising RF performance. This book, therefore, provides an in-depth analysis on ESD protection structures and concepts, implemented in silicon on insulator FinFET technology. Complex dependencies are found for the different ESD performance parameters on both device geometry and process technology. Further, in this book, novel RF-ESD protection solutions are proposed for both narrow- and wideband RF CMOS circuits in most advanced CMOS technologies, with a special emphasis towards CDM protection. This analysis should provide fundamental understanding of the ESD challenges for FinFET technology and RF CMOS circuits, and should be especially useful to everyone working with ESD in the field of product development, support, research or education.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 272 pp. Englisch.…