Isbn: 9783659308598 - design and simulation of trench gate power mosfet: for rf and switching applications (7 resultados)

Condición: New. pp. 156.

Taschenbuch. Condición: Neu. Design and Simulation of Trench Gate Power MOSFET | for RF and Switching Applications | Raghvendra Sahai Saxena | Taschenbuch | Englisch | LAP Lambert Academic Publishing | EAN 9783659308598 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.…

Paperback. Condición: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Saxena Raghvendra SahaiR. S. Saxena has completed his Ph.D. degree from IIT Delhi, India in 2012. Since 1998 he has been a scientist at SSPL, Delhi, India, working on the design, modeling, and testing of IR detectors and their readou.…

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Trench gate power MOSFETs are the best suited devices for low to medium voltage power applications, like microprocessor power supplies, LED display drivers and automobiles etc. The main figures of merit of a power device are its ON-state resistance, breakdown voltage, switching delays and the power consumed during its operation. All these parameters are interlinked by the technology and the physics behind its operation. In this work such problems have been studied systematically and several methods have been proposed to overcome these limitations in a trench gate power MOSFET by improving its basic structure and are verified by the 2D numerical simulations using industry standard TCAD tools.…

Condición: New. Print on Demand pp. 156 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condición: New. PRINT ON DEMAND pp. 156.