9783330040939 - Synthesis, Structural, Electrical, Optical and Thermoelectrical: Properties of Indium Doped Lead Selenide Thin Films de Chaudhari, Kailas; Gujarathi, Dhananjay (7 resultados)

Paperback. Condición: Brand New. 180 pages. 8.66x5.91x0.41 inches. In Stock.

Taschenbuch. Condición: Neu. Synthesis, Structural, Electrical, Optical and Thermoelectrical | Properties of Indium Doped Lead Selenide Thin Films | Kailas Chaudhari (u. a.) | Taschenbuch | 180 S. | Englisch | 2017 | LAP LAMBERT Academic Publishing | EAN 9783330040939 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Thin film science has received tremendous attention in last five-six decades, because of numerous and widespread applications of thin films in diverse fields such as electronic industries and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. The II - VI and IV-VI chalcogenide compounds are of prime importance from the point of view of device applications in various fields. They have been considered as promising materials for technological applications in the field of IR devices, diodes, lasers, thermo photovoltaic converts, nanowires, solar cell, electroluminescence. Lead chalcogenides have narrow energy gap and are semiconductors having structural and electronic properties like high carrier mobility, high dielectric constants, an attempt has been made to study on end compound of Pb1-xInxSe that is PbSe and InSe films as well as middle compounds. The Fermi energy, electrical energy band gap, mobility, carrier concentration, thermo electric properties, scattering parameters, optical direct and indirect band gap, absorption coefficient, extinction coefficient were evaluated. 180 pp. Englisch.

Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Chaudhari KailasDr. K. S. Chaudhari is working as a Asso.Prof. at D. R. College,Dondaicha since last 20 years. He has published many research papers in reputed Journals.Dr. D. N. Gujarathi is renowned Asso. Prof. and Researcher of Ph.

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Thin film science has received tremendous attention in last five-six decades, because of numerous and widespread applications of thin films in diverse fields such as electronic industries and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. The II - VI and IV-VI chalcogenide compounds are of prime importance from the point of view of device applications in various fields. They have been considered as promising materials for technological applications in the field of IR devices, diodes, lasers, thermo photovoltaic converts, nanowires, solar cell, electroluminescence. Lead chalcogenides have narrow energy gap and are semiconductors having structural and electronic properties like high carrier mobility, high dielectric constants, an attempt has been made to study on end compound of Pb1-xInxSe that is PbSe and InSe films as well as middle compounds. The Fermi energy, electrical energy band gap, mobility, carrier concentration, thermo electric properties, scattering parameters, optical direct and indirect band gap, absorption coefficient, extinction coefficient were evaluated.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 180 pp. Englisch.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Thin film science has received tremendous attention in last five-six decades, because of numerous and widespread applications of thin films in diverse fields such as electronic industries and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. The II - VI and IV-VI chalcogenide compounds are of prime importance from the point of view of device applications in various fields. They have been considered as promising materials for technological applications in the field of IR devices, diodes, lasers, thermo photovoltaic converts, nanowires, solar cell, electroluminescence. Lead chalcogenides have narrow energy gap and are semiconductors having structural and electronic properties like high carrier mobility, high dielectric constants, an attempt has been made to study on end compound of Pb1-xInxSe that is PbSe and InSe films as well as middle compounds. The Fermi energy, electrical energy band gap, mobility, carrier concentration, thermo electric properties, scattering parameters, optical direct and indirect band gap, absorption coefficient, extinction coefficient were evaluated.