Isbn: 9781461289494 - polycrystalline silicon for integrated circuit applications: 45 (the springer international series in engineering and computer science) (9 resultados)

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  • Idioma: Inglés

    Editorial: Springer, 2011

    1461289491 / 9781461289494

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    Librería: Ria Christie Collections, Uxbridge, Reino UnidoRia Christie Collections

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    Condición: New. In English.

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    Editorial: Springer, 2011

    1461289491 / 9781461289494

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    Librería: Books Puddle, New York, NY, Estados Unidos de AmericaBooks Puddle

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    EUR 213,02

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    Condición: New. pp. 308.

  • Idioma: Inglés

    Editorial: Springer, Springer, 2011

    1461289491 / 9781461289494

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    Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH

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    Taschenbuch. Condición: Neu. Druck auf Anfrage Neuware - Printed after ordering - Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.

  • Idioma: Inglés

    Editorial: Springer, 2011

    1461289491 / 9781461289494

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    Librería: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    Condición: new. Questo è un articolo print on demand.

  • Idioma: Inglés

    Editorial: Springer US, 2011

    1461289491 / 9781461289494

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    Librería: moluna, Greven, Alemaniamoluna

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    Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon te.

  • Idioma: Inglés

    Editorial: Springer, 2011

    1461289491 / 9781461289494

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    Librería: Majestic Books, Hounslow, Reino UnidoMajestic Books

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    EUR 221,35

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    Condición: New. Print on Demand pp. 308 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.

  • Idioma: Inglés

    Editorial: Springer, Springer Okt 2011, 2011

    1461289491 / 9781461289494

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    Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000

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    Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 308 pp. Englisch.

  • Idioma: Inglés

    Editorial: Springer, 2011

    1461289491 / 9781461289494

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    Librería: Biblios, frankfurt am main, HESSE, AlemaniaBiblios

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    EUR 224,16

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    Condición: New. PRINT ON DEMAND pp. 308.

  • Idioma: Inglés

    Editorial: Springer US Okt 2011, 2011

    1461289491 / 9781461289494

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    Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.

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    Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior. 308 pp. Englisch.