sulagna chatterjee (8 resultados)

Condición: New.

PAP. Condición: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

PAP. Condición: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 136 pp. Englisch.

Taschenbuch. Condición: Neu. Nanoscale Strain-engineering in Solid State Semiconductor Devices | From Fundamentals to Applications | Sulagna Chatterjee | Taschenbuch | Englisch | 2026 | LAP LAMBERT Academic Publishing | EAN 9786209522390 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand.

Paperback. Condición: new. Paperback. An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 136 pp. Englisch.

Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering.