Michael hosch (6 resultados)

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    • Condición: Nuevo

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      Condición: New. Die sichere Orientierung im Oeffentlichen Baurecht!Die 4. Auflage des Systematischen Praxiskommentars steht ganz im Zeichen des Baulandmobilisierungsgesetzes, welches am 23.6.2021 in Kraft getreten ist. Dieses Werk bietet allen an der Bauentwicklung und .

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      Editorial: Cuvillier Aug 2011, 2011

      386955844X / 9783869558448

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      Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.

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      Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations. 130 pp. Englisch.

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      Editorial: Jentzsch-Cuvillier, Annette, 2011

      386955844X / 9783869558448

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      Librería: moluna, Greven, Alemaniamoluna

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      Kartoniert / Broschiert. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnThis thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The ef.

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      Editorial: Cuvillier, Cuvillier Aug 2011, 2011

      386955844X / 9783869558448

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      Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000

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      Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.Cuvillier Verlag, Nonnenstieg 8, 37075 Göttingen 130 pp. Englisch.

    • Idioma: Inglés

      Editorial: Cuvillier, Cuvillier

      386955844X / 9783869558448

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      Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH

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      Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.

    • Idioma: Inglés

      Editorial: Cuvillier, 2011

      386955844X / 9783869558448

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      Librería: preigu, Osnabrück, Alemaniapreigu

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      EUR 22,25

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      Taschenbuch. Condición: Neu. Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications | Michael Hosch | Taschenbuch | Englisch | 2011 | Cuvillier | EAN 9783869558448 | Verantwortliche Person für die EU: Cuvillier Verlag, Nonnenstieg 8, 37075 Göttingen, info[at]cuvillier[dot]de | Anbieter: preigu Print on Demand.