Michael hosch (6 resultados)
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Librería: moluna, Greven, Alemaniamoluna
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Condición: New. Die sichere Orientierung im Oeffentlichen Baurecht!Die 4. Auflage des Systematischen Praxiskommentars steht ganz im Zeichen des Baulandmobilisierungsgesetzes, welches am 23.6.2021 in Kraft getreten ist. Dieses Werk bietet allen an der Bauentwicklung und .
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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
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Librería: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, AlemaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condición: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effe…ct of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations. 130 pp. Englisch.
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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
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Librería: moluna, Greven, Alemaniamoluna
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Kartoniert / Broschiert. Condición: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnThis thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applicatio…ns as well as the optimization of the RF gain. The ef.
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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
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Librería: buchversandmimpf2000, Emtmannsberg, BAYE, Alemaniabuchversandmimpf2000
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Taschenbuch. Condición: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect o…f current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.Cuvillier Verlag, Nonnenstieg 8, 37075 Göttingen 130 pp. Englisch.
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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
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Librería: AHA-BUCH GmbH, Einbeck, AlemaniaAHA-BUCH GmbH
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Taschenbuch. Condición: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of… current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
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Librería: preigu, Osnabrück, Alemaniapreigu
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Taschenbuch. Condición: Neu. Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications | Michael Hosch | Taschenbuch | Englisch | 2011 | Cuvillier | EAN 9783869558448 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]…de | Anbieter: preigu Print on Demand.
